S9012 SECOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Any changing of specification will not be informed individual S9012 PNP Silicon General Purpose Transistor DEVICE MARKING S9012=2T1 Power dissipation PCM : 0.3 W Collector Current ICM : - 0.5 A Collector-base voltage FEATURES Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S GV 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100ȰAđ IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1mAđ IB=0 V Emitter-base breakdown voltage V(BR)EBO IE= -100ȰAđ IC=0 - 5 V Collector cut-off current I CBO VCB=- 40 V , IE=0 -0.1 ȰA Collector cut-off current I CEO VCE=- 20V , IB=0 -0.1 ȰA Emitter cut-off current IEBO VEB=-5 V, I C=0 -0.1 ȰA H FE(1) VCE= -1V , I C=-50mA 120 400 DC current gain H FE(2) VCE= -1V , IC=-500mA 40 Collector-emitter saturation voltage VCE(sat) I C= -500 mA , IB=- 50mA -0.6 V Base-emitter saturation voltage VBE(sat) I C= -500 mA , IB= -50mA -1.2 V Transition frequency f T VCE=- 6V, IC=-20mA f=30MHz
150 MHz
ELECTRICAL CHARACTERISTICS ( Tamp.=25 O C unless otherwise specified) V(BR)CBO : -40 V Operating & storage junction temperature Tj, Tstg : - 55 O C ~ + 150 O C 17-Dec-2007 Rev.B Page 1 of 1 -25 CLASSIFICATION OF h FE(1) Rank L H J Range 120-200 200-350 300-400 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free