S9012 DGNJDZ | Alldatasheet
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Technical content
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013 is recommended. Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -V CBO 40 V Collector Emitter Voltage -V CEO 30 V Emitter Base Voltage -V EBO 5 V Collector Current -I C 500 mA Power Dissipation P tot 625 mW Junction Temperature T j 150 OC Storage Temperature Range T stg - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain a t - VCE = 1 V, -IC = 5 0 m A C u r r e n t G a i n G r o u p a t - V CE = 1 V, -IC = 500 mA G H I hFE hFE hFE hFE 110 190 290 200 300 380 Collector Base Cutoff Current a t - VCB = 35 V -ICBO - 100 nA Emitter Base Cutoff Current a t - VEB = 5 V -IEBO - 100 nA Collector Base Breakdown Voltage a t - IC = 100 μA -V(BR)CBO 40 - V Collector Emitter Breakdown Voltage a t - IC = 1 mA -V(BR)CEO 30 - V Emitter Base Breakdown Voltage a t - IE = 100 μA -V(BR)EBO 5 - V Collector Emitter Saturation Voltage a t - IC = 500 mA, -IB = 50 mA -VCE(sat) - 0.6 V Base Emitter Saturation Voltage a t - IC = 500 mA, -IB = 50 mA -VBE(sat) - 1.2 V Base Emitter Voltage a t - VCE = 1 V, -IC = 100 mA -VBE - 1 V Gain Bandwidth Product a t - VCE = 6 V, -IC = 20 mA fT 100 - MHz 1. Emitter 2. Base 3. Collector TO-92 Plastic Package