S9012 UMW | Alldatasheet
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Technical content
S9012 TRANSISTOR (PNP)
FEATURES
z Excellent h FE Linearity MARKING: 2T1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=-0.1mA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO I C=-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO I E=-0.1mA, IC=0 -5 V Collector cut-off current ICBO V CB=-40V, IE=0 -0.1 uA Collector cut-off current ICEO V CE=-20V, IB=0 -0.1 uA Emitter cut-off current IEBO V EB=-5V, IC=0 -0.1 uA DC current gain hFE V CE=-1V, IC=-50mA 120 400 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V Transition frequency fT V CE=-6V,IC=-20mA, f=30MHz 150 MHz Collector output capacitance Cob V CB=-10V, IE=0, f=1MHz 5 pF CLASSIFICATION OF hFE RANK L H J RANGE 120-200 200-350 300-400 SOT-23 Plastic-Encapsulate Transistors UMW R UMW S9012 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 1www.umw-ic.com 友台半导体有限公司
-1 -10 -100 100 200 300 400 -1 -10 -100 -10 -100 -1000 -0.1 -1 -10 -10 -100 500 0 25 50 75 100 125 150 100 200 300 400 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -20 -40 -60 -80 -100 fT —— IC hFE —— COMMON EMITTER VCE=-1V -500 Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=25℃ Ta=100℃ ICVCEsat —— -500 100 100 -20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz IE=0/ IC=0 Ta=25℃ VCB/ VEBCob/ Cib —— CAPACITANCE C (pF) VCE=-6V Ta=25 o C TRANSITION FREQUENCY f T (MHz) COLLECTOR POWER DISSIPATION Pc (mW) Pc —— Ta β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ -500 ICVBEsat —— Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -400uA -350uA -300uA -250uA -200uA -150uA -100uA IB=-50uA COMMON EMITTER Ta=25℃ www.umw-ic.com 2 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW S9012
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout 3www.umw-ic.com 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW S9012