S9011 BILIN | Alldatasheet
Document overview
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Technical content
BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S 9 0 1 1 Document number: BL/SSSTC126 www.galaxycn.com R e v . A 1
FEATURES
z Collector Current.(I C= 30mA） z Power dissipation.(P C=200mW)
APPLICATIONS
z AM converter, AM/FM if amplifier general purpose transistor. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code S 9 0 1 1 1 T S O T - 2 3 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 30 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 B 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=1mA 28 198 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA B 0.3 V Transition frequency fT VCE=5V, IC= 1mA 150 MHz Output capacitance Cob VCB=10V, IE=0,f=1MHz 4 pF
BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S 9 0 1 1 Document number: BL/SSSTC126 www.galaxycn.com R e v . A 2 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J 0.1Typical K 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm G K H J E D C B A
PACKAGE INFORMATION
S9011 SOT-23 3000/Tape&Reel