S9005P2CT DIODES | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

L M A N P D E K C B J G HH TO-220AB Dim Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 E /c190 6.25 G 12.70 14.73 H 2.29 2.79 J 0.51 1.14 K 3.53/c1984.09/c198 L 3.56 4.83 M 1.14 1.40 N 0.30 0.64 P 2.03 2.92 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified /c183Schottky Barrier Chip /c183Guard Ring Die Construction for Transient Protection /c183Low Power Loss, High Efficiency /c183High Surge Capability /c183High Current Capability and Low Forward Voltage Drop /c183For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications /c183Plastic Material - UL Flammability Classification 94V-0 Mechanical Data Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol S9005P2CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 100 V Minimum Avalanche Breakdown Voltage per element (Note 1) @ 0.9A /c190 110 V Average Rectified Output Current (Note 1 & 3) I O 20 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) (Note 3) I FSM 225 A Instantaneous Forward Voltage Drop @ i F = 10A vFM 0.70 V Peak Reverse Current @ T C = 25/c176C at Rated DC Blocking Voltage @ T C = 125/c176C IRM 2.0 80 mA Typical Junction Capacitance per element (Note 2) Cj 325 pF Voltage Rate of Change at Rated DC Blocking Voltage dv/dt 10000 V/ /c109s Non-repetitive Avalanche Energy (Constant Current During a 20/c109s pulse) @ T C = 125/c176C W1 0 m J Typical Thermal Resistance Junction to Case per element (Note 1) R /c113Jc 1.5 K/W Operating and Storage Temperature Range Tj, TSTG -60 +150 /c176C Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. I FSM and IO values shown are for entire package. For any single diode the values are one half of listed value. /c183Case: Molded Plastic /c183Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 /c183Polarity: As Marked on Body /c183Weight: 2.24 grams (approx) /c183Mounting Position: Any /c183Marking: Type Number

DS23028 Rev. P-5 2 of 2 S9005P2CT 0.1 1.0 100 0.2 0.4 0.6 0.8 I,INST ANT ANEOUS FOR W ARD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F T = 25 C Pulse width = 300 s 2% duty cycle j ° µ 1000 1.0 100 0 40 80 100 I,INST ANT ANEOUS CURRENT (A) F REVERSE V , INSTANTANEOUS REVERSE VOLTAGE (V) Fig.3 T ypical Reverse Characteristics F T = 25 C Pulse width = 300 s 2% duty cycle j ° µ 100 1000 0.1 1.0 10 100 C ,CAP ACIT ANCE (pF) J V , REVERSE VOLTAGE (V) Fig.4 T ypical Junction Capacitance R T = 25 Cj ° 0 50 100 150 I ,AVERAGE FOR W ARD CURRENT (A) T , CASE TEMPERATURE ( C) Fig. 1 Forward Current Deratin g Curve C °