S8C5H30L

STS8C5H30L STMICROELECTRONICS | Alldatasheet

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Table 3: Absolute Maximum ratings (/circle6 ) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Table 4: Thermal Data ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Table 6: Dynamic (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Symbol Parameter Value Unit N-CHANNEL P-CHANNEL VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 30 V VGS Gate- source Voltage ± 16 ± 16 V ID Drain Current (continuous) at TC = 25°C Single Operating 84 . 2 A ID Drain Current (continuous) at TC = 100°C Single Operating 6.4 3.1 A IDM (/circle6 ) Drain Current (pulsed) 32 16.8 A PTOT Total Dissipation at TC = 25°C Dual Operating Total Dissipation at TC = 25°C Single Operating 1.6 W W Tj Tstg Operating Junction Temperature Storage Temperature 150 -55 to 150 Rthj-case Thermal Resistance Junction-case Single Operating Dual Operating 62.5 °C/W °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 n-ch p-ch V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C n-ch p-ch µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16V VGS = ± 16V n-ch p-ch ±100 ±100 nA nA VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250 µA n-ch p-ch 11 . 6 2 . 5 V V R DS(on) Static Drain-source On Resistance VGS = 10 V, ID = 4 A VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 4 A VGS = 4.5 V, ID = 2.5 A n-ch p-ch n-ch p-ch 0.018 0.045 0.020 0.070 0.022 0.055 0.025 0.075 Ω Ω Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit g fs (1) Forward Transconductance VDS = 15 V, ID = 4 A VDS = 15 V, ID = 2.5 A n-ch p-ch 8.5 S S C iss Input Capacitance V DS = 25V, f = 1 MHz, VGS = 0 n-ch p-ch 857 1350 pF pF C oss Output Capacitance n-ch p-ch 147 490 pF pF C rss Reverse Transfer Capacitance n-ch p-ch 130 pF pF

ELECTRICAL CHARACTERISTICS(CONTINUED) Table 7: Switching On Table 8: Switching Off Table 9: Source-Drain Diodef (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V, ID = 4 A, R G = 4.7 Ω, VGS = 4.5 V P-CHANNEL VDD = 15 V, ID = 2 A, R G = 4.7 Ω, VGS = 4.5 V (Resistive Load see, Figure 28) n-ch p-ch n-ch p-ch 14.5 ns ns ns ns Q g Total Gate Charge V DD = 24 V, ID = 8 A, VGS = 5 V P-CHANNEL VDD = 24 V, ID = 4 A, VGS = 5 V (see, Figure 31) n-ch p-ch 12.5 nC nC Q gs Gate-Source Charge n-ch p-ch 2.5 nC nC Q gd Gate-Drain Charge n-ch p-ch 2.3 nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V, ID = 4 A, R G = 4.7 Ω, VGS = 4.5 V P-CHANNEL VDD = 15 V, ID = 2.5 A, R G = 4.7 Ω, VGS = 4.5 V (Resistive Load see, Figure 28) n-ch p-ch n-ch p-ch 125 ns ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current n-ch p-ch A A ISDM (2) Source-drain Current (pulsed) n-ch p-ch A A VSD (1) Forward On Voltage I SD = 8 A, VGS = 0 ISD = 5 A, VGS = 0 n-ch p-ch 1.5 1.2 V V trr Reverse Recovery Time I SD = 8 A, di/dt = 100 A/µs VDD = 15V, Tj = 150°C P-CHANNEL ISD = 5 A, di/dt = 100 A/µs VDD = 15V, Tj = 150°C (see test circuit, Figure 29) n-ch p-ch ns ns Q rr Reverse Recovery Charge n-ch p-ch 5.7 nC nC IRRM Reverse Recovery Current n-ch p-ch 0.76 1.6 A A

DIM. mm. inch A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 S 8 (max.) SO-8 MECHANICAL DATA

Table 10: Revision History Date Revision Description of Changes 10-Aug-2004 1 First Revision 10-Sep-2004 2 Complete Version

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