S8850A TOSHIBA | Alldatasheet
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TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8850A FEATURES: = HIGH POWER = SUITABLE FOR Ku-BAND AMPLIFIER Pigg = 21.5dBm at f = 15 GHz = HIGH GAIN = ION IMPLANTATION Gigp = 9.0 dB at f=15 GHz RF PERFORMANCE SPECIFICATIONS (Ta = 25°C) TYPE NUMBER S8850A (PACKAGE CODE) (2-3K 1B) Output Power [20.5 [21.5] - | a com- pression Point |_- [20.5] - | at 1dB Com- G1aB pression Point | - [9.0 | - |
15 GHz
| - [0.06 [o.09 | Power Added | - | 21 | -. | Efficiency | "ead [= 20 =) ELECTRICAL CHARACTERISTICS (Ta = 25°C) , TYPE NUMBER S8850A (PACKAGE CODE) (2-3K1B) - Vpc= Trans ps* 3V mS _ 30 _ conductance Ips= 45mA Vps= Pinch-off£ Vosoft ps* 3v Vv -2.5 | -3.5 -5 Voltage Ips=1.5maA Saturated Vps=3V I A - ol 0.125 Drain Current pss Vgs=0V - ° Gate to Source -_ _ Breakdown | vaso |Fcs- 1.5yA v -5 - Voltage |__| Thermal Rth (c-c) Channel °C/W _ 90 150 Resistance to case SSS * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with the design of equipment incorporating this product. Rs TOSHIBA CORPORATION SES Revised May 1990
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) TYPE NUMBER S8850A (PACKAGE CODE) (2-3K1B) Total Power Dissipation PACKAGE OUTLINE (2-3K1B) Unit in ma ® z 0.5~0.15 = #1.6+0.1 r cos 2 | a @ Gate E — @ Source N Ls ay, @ brain N a —— i) 0.5+0.15 OI 6120.1 oo 3.0 MAX. +1 ae < ; qc St 2 ay op ort +H) o | + QQ] oO slo HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
Output Power vs. Input Power a= T1111 Vps = lov wastes [TT fel at LEP per tT ~~ tert tt fi, 1 Vit tt tt ~ 19 40 oO eT Ty Titty, LY tT Tp ret .. 2 Vitro ti td, 3 »_LiTTiti titi, 6 8 10 12 14 16 Pin (dBm) POWER DISSIPATION VS. CASE TEMPERATURE 1.2 PT Titi t yt tty el PINT ETT TT z,4/NITTTT TI 0.8 « CLEN TET ne HN oa LETT NTT TI SERENE LLL TTR 0 40 80 120 160 200 To (°C)
S8850A__S-PARAMETERS _ (MAGN. and ANGLES) Vps = 10 V, Ipg = 50 mA f= 8 - 18 GHz +1 +se° 16/5 OK EN +150 L 7 wae N : 38 HIST Aid ‘e) Y \\ 9 ET LISSA aNcae Vs cs 13S tiea SZ 9 e ‘Scale for |s12| y RSSey eRe, -128° 6a" at ~ser FREQUENCY s s Ss Ss 8 0.95 176 | 0.026 -47 1.06 -1] 0.87 -135 9 0.92 169 | 0.024 -51 0.94 -14] 0.88 -145 10 0.91 161 | 0.024 -58 0.91 -27| 0.89 -153 1l 0.89 151 | 0.027 -66 0.91 -40 |] 0.91 -160 12 0.87 141 | 0.032 -76 0.97 ~56-| 0.93 -169 13 0.821 132 | 0.039 -88 1.01 -74] 0.95 -177 14 0.68 125 | 0.045 -108 1.09 -95 |] 0.94 172 16 0.43 127 | 0.060 -161 1.18 -156 |] 0.94 145 17 0.55 135 | 0.058 173 0.99 169 | 0.89 132 18 0.74 129 | 0.044 149 0.70 141 | 0.88 126