S8836A TOSHIBA | Alldatasheet
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TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR °° FEATURES: = HIGH POWER ™ SUITABLE FOR C-BAND AMPLIFIER Pigg = 29.5 dBm at f = 8 GHz = HIGH GAIN = ION IMPLANTATION G = 7.5 dB at f= 8 GHz 1dB RF PERFORMANCE SPECIFICATIONS (Ta = 25°C) TYPE NUMBER $8836A (PACKAGE CODE) (2-7C1B) Output Power at 1dB Com- PidB 28.5 | 29.5 pression Point Vne= 10V Power Gain DS at 1dB Com- GiaB 6.5 7.5 pression Point £ = 8GHz La [= [oa | os | Power Added Efficiency Pe f- fe || ELECTRICAL CHARACTERISTICS (Ta = 25°C) "TYPE NUMBER S8836A (PACKAGE CODE) (2-7C1B) Trans— Vpg =3V conductance | oom | Ipg=0.28A ms - 170 - Vps= Pinch-off Voesoft ps=3v Vv -2 -3.5 5 Voltage Ips=5mA Saturated Vps=3V _ 0.7 Drain Current Ipss Vgs=0v A 0.55 . Gate to Source _ Breakdown Veso Tgg=-l0pua v -5 - - Voltage : Thermal Rth (c-c) Channel °C/W - 20 30 Resistance to case * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before . _ Proceeding with the design of equipment incorporating this product. Re TOSHIBA CORPORATION Sis Revised May 1989
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) TYPE NUMBER S8836A (PACKAGE CODE) (2-7C1B) h prorat Pireasey | Pe Te=25 °C: Pr " Channel Temperature 175 PACKAGE OUTLINE (2-7C1B)
2.5403 Unit in mm
oi , C15 ON o7z016 / is @ cate x pega bp ee 3 + @ Source $ @ Drain
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o Sas oT I |Z, O° . | foztor1s Zz fl = . 18.5 MAX. oo 6.8 MAX. + So : —_—_ ar a rs ar + o o + +H N = clo HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
OUTPUT POWER CHARACTERISTIC Output Power vs. Input Power =r || > TLT Vps = 10V eT | ow LL LET Tey tt tt a,-L Tv ttt tt 8 27 Wa 40 ° LE ee | ws -tLerT Ts Pl rT ttt ty i i io 8 »a-LEtT ETE ty ty, 16 18 20 22 24 26 Pin (aBm) POWER DISSIPATION VS. CASE TEMPERATUR ET TT TTT yt Ty s-L TTT TTT Tt PINT Tey TT TT aE AE TT TTT TT — LEEPARETET TT = COON « LITEN ITT TT a-E TT TATE TT Pt PPP PK TT it TEIN TT Pitre TiN Tt o-LTT Tt ti Nt} 0 40 80 120 160 200 T. (°C)
$8836A_S-PARAMETERS (MAGN. and ANGLES) Vpg = 10 V, Ipg = 226 mA £= 3 - 10 GHz re {> 48.2, 4 +5 fo at > [EPI LB | Es fe SENN tiaee [Scale for, |si2 WAG le RPS SS EY = ka ad -3e" 4 0.91 143 | 0.026 -35)] 1.43 -1l 0.52 -163 5 0.86 125 | 0.029 -51] 1.43 -39 0.59 -176 6 0.79 87 | 0.036 -78| 1.56 -77 0.57 169 7 0.72 48) 0.045 -106 | 1.70 -116 0.58 144 8 0.58 -10 | 0.065 -155] 2.04 -168 0.50 115 9 0.52 -103 | 0.081 144] 2.15 129 0.34 88 10 0.65 -162 | 0.086 79) 1.86 63 0.16 ~-164