S8834 TOSHIBA | Alldatasheet
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TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR ‘°: $8834 FEATURES: = = MEDIUM POWER = SUITABLE FOR C-BAND AMPLIFIER Pigg = 21dBm at f= 8 GHz = ION IMPLANTATION = HIGH GAIN Gigg = 9 dB at f= 8 GHz RF PERFORMANCE SPECIFICATIONS (Ta = 25°C) TYPE NUMBER $8834 (PACKAGE CODE) (2-3H1B) Output Power 7 at 1dB Com-. PiaB dBm | 20.0 21.0 pression Point Vex Power Gain ps lov at 1dB Com- GlaB pression Point f= 8GHz Drain Gummer ps pa | = | 2e4{ 007 Power Added ELECTRICAL CHARACTERISTICS (Ta = 25°C) TYPE NUMBER . $8834 (PACKAGE CODE) (2-3H1B) Trans- Vpg=3V conductance Sm Ipg=45mA mS - 30 - Vv = Pinch-off Vesore | oY vi | -2 -3 | <5 Voltage Ips=1.5mA Saturated Vps=3V Drain Current Toss Vgs=0V A 0.125 Gate to Source Breakdown Yeso Igg=-1-Sua v “5 Voltage to case from] = [50 | 200 | Resistance to case % The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by "TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before | proceeding with the design of equipment incorporating this product. EE TOSHIBA CORPORATION xs Revised May 1989
ABSOLUTE MAXIMUM RATINGS (Ta=25°C) TYPE NUMBER (PACKAGE CODE) 2-3H1B) Total Power Dissipation PACKAGE OUTLINE (2-3H1B) 0.620, Unit in mm ® E FI Gate 1.60.1 | a ® io @ Source S) @ FA ® brain R 1.25 Zz (6) «| 2,540.2 6.120. Lal ee eEeHST v 8) Si ul oS ol cl al HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
OUTPUT POWER CHARACTERISTIC Output Power vs. Input Power =a LLLLLL meee COCO C a Lt Tt Tet | ai cae git} Vet tt tt LTA TT hed | TP ar VA — 30 4 | err te a < Yi iri ttt tty 3 e wLLT TET TT TT |, 6 8 10 12 14 16 Pin (dBm) POWER DISSIPATION VS. CASE TEMPERATURE 2.5 LTT TTT TTT aot Tt TT TT TT Lt tt tt Perry Pe = “OSECoeere » opt tT KET TT TT * “TTT TN TTT ws EDEN FOO oLL TT TTT TXT | 0 40 80 120 160 200 T. (°C)
$8834 _S-PARAMETERS (MAGN. and ANGLES) Vps = 10 V, Ipg = 40 mA £ = 3 - 10 GHz +1 +s0° OA +1208 cL OX | ™~ \\ wh (3 SEEN ay: xan Ee SN ee Se —— Scale for |s12| a) WT ESG LORE] ] \\ Kp LS as y 150" ser Re rf Hh ; cal 38° FREQUENCY s Ss 3 0.91 -79 0.042 32 2.04 101 0.78 -58 4 0.87 =99 0.046 20 1.78 81 0.79 -69 5 0.84 -116 0.048 10 1.58 63 0.79 -82 6 0.83 -127 0.046 2 1.43 47 0.80 -94 7 0.77 -140 0.048 -4 1.35 31 0.81 -103 8 0.73 -161 0.050 -13 1.31 13 0.80 -115 9 0.72 -177 0.049 ~24 1.20 -6 0.82 -131 10 0.68 174 0.047 -31 1.07 -22 0.84 -142