S8550T SECOS | Alldatasheet
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Technical content
General Purpose Transistor 01-June-2007 Rev. C Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 2.54 (1.27 Typ.) 132 1: Emitter 2: Base 3: Collector 1.25 4.55 0.2 0.1 0.1 0.20.2 0.2 0.2 3.5 4.514.3 0.46 0.43 0.07 0.08 TO-92 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free
FEATURES
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage V CBO -40 V Collector to Emitter Voltage V CEO -25 V Emitter to Base Voltage V EBO -5 V Collector Currrent I C -500 mA Total Power Dissipation P D 625 mW Junction, Storage Temperature T J, TSTG +150, -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V (BR)CBO -40 - - V I C = -100 μA, IE = 0 Collector-emitter Breakdown Voltage V (BR)CEO -25 - - V I C = -1 mA, IB = 0 Emitter-base Breakdown Voltage V (BR)EBO -5 - - V I E = -100 μA, IC = 0 Collector Cut-off Current I CBO - - -0.1 μA VCB = -40 V, IE = 0 Collector Cut-off Current I CEO - - -0.1 μA VCE = -20 V, IB = 0 Emitter Cut-off Current I EBO - - -0.1 μA VEB = -3 V, IC = 0 hFE(1) 85 - 400 V CE = -1 V, IC = -50 mA DC Current Gain hFE(2) 50 - - V CE = -1 V, IC = -500 mA Collector-emitter Saturation Voltage V CE(sat) - - -0.6 V I C = -500 mA, IB = -50 mA Base-emitter Saturation Voltage V BE(sat) - - -1.2 V I C = -500 mA, IB = -50 mA Transition Frequency f T 150 - - MHz V CE = -6 V, IC= -20 mA, f = 30 MHz CLASSIFICATION OF hFE Rank B C D D3 Range 85 - 160 120 - 200 160 - 300 300 - 400
General Purpose Transistor 01-June-2007 Rev. C Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES