S8550LT1 WINGS | Alldatasheet
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Technical content
HIGH VOLTAGE TRANSISTOR: (PNP)
FEATURES
0.44*0.44mm Power dissipation P CM : 225mW （Tamb=25℃） Collector current I CM : 0.5A Collector-base voltage V (BR)CBO : 40V ELECTRICAL CHARACTERISTICS （（ （（Tamb=25℃℃ ℃℃ unless otherwise specified ）） ）） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA，IB=0 21 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA，IC=0 5.0 V Collector cut-off current ICBO VCB= 30V , IE=0 1.0 µA Emitter cut-off current IEBO VEB= 5V，IC=0 100 nA HFE（1） VCE= 1V, IC= 150mA 120 400 DC current gain(note) HFE（2） VCE= 1V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50 mA 500 mV Base-emitter saturation voltage VBE(sat) I C= 500mA, IB= 50 mA 1.2 V Base-emitter voltage VBE(on) IC= 10mA, VCE =1V 1.0 V CLASSIFICATION OF HFE(1) Rank B9C B9D B9E Range 120-200 160-300 280-400 SOT—— ——23 1. BASE 2. EMITTER 3. COLLECTOR Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com