S8550G-X-T92-B

S8550_09 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R201-014.B LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. „ FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to UTC S8050 * Halogen Free Lead-free: S8550L Halogen-free:S8550G „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Halogen-Free Package 1 2 3 Packing S8550-x-T92-B S8550L-x-T92-B S855 0G-x-T92-B TO-92 E B C Tape Box S8550-x-T92-K S8550L-x-T92-K S855 0G-x-T92-K TO-92 E B C Bulk

S8550 PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 2 0 1 - 0 1 4 . B „ ABSOLUTE MAXIMUM RATING (Ta =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO -30 V Collector-Emitter Voltage V CEO -20 V Emitter-Base Voltage V EBO -5 V Collector Current I C -700 mA Collector Dissipation (Ta =25°C) P C 1 W Junction Temperature T J 150 °C Storage Temperature T STG -65 ~ +150 °C Note: Absolute maximum ratings are those values be yond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO I C =-100μA, IE =0 -30 V Collector-Emitter Breakdown Voltage BV CEO I C =-1mA, IB =0 -20 V Emitter-Base Breakdown Voltage BV EBO I E =-100μA, IC =0 -5 V Collector Cut-Off Current I CBO V CB =-30V, IE =0 -1 μA Emitter Cut-Off Current I EBO V EB =-5V, IC =0 -100 nA hFE1 V CE =-1V, IC =-1mA 100 hFE2 V CE =-1V, IC =-150mA 120 110 400 DC Current Gain hFE3 VCE =-1V, IC =-500mA 40 Collector-Emitter Saturation Voltage V CE(SAT) I C =-500mA, IB =-50mA -0.5 V Base-Emitter Saturation Voltage V BE(SAT) I C =500mA, IB =-50mA -1.2 V Base-Emitter Saturation Voltage V BE V CE =-1V, IC =-10mA -1.0 V Current Gain Bandwidth Product f T V CE =-10V, IC =-50mA 100 MHz Output Capacitance Cob VCB =10V, IE =0, f =1MHz 9.0 pF „ CLASSIFICATION OF hFE2 RANK C D E RANGE 120-200 160-300 280-400

S8550 PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 2 0 1 - 0 1 4 . B „ TYPICAL CHARACTERISTICS -0.5 -0.4 -0.3 -0.2 -0.1 -0.40 Collector-Emitter Voltage, VCEO (V) Collector Current, IC (mA) Static Characteristics 103 DC Current Gain VCE=-1V 102 101 100 -10-1 -100 -101 -102 -103 Collector Current, IC (mA) DC Current Gain, hFE VCE=-1V Base-Emitter on Voltage -102 -101 -100 -10-1 Base-Emitter Voltage, VBEO (V) Collector Current, IC (mA) -104 -103 -102 -101 -10-1 -100 -101 -102 -103 Collector Current, IC (mA) Saturation Voltage, (mV) Saturation Voltage VBE(SAT) VCE(SAT) IC=10xIB 103 102 101 100 -100 -101 -102 -103 Collector Current, IC (mA) Current Gain-Bandwidth Product, fT (MHz) Current Gain-Bandwidth Product VCE=-10V 103 102 101 100 -100 -101 -102 -103 Collector-Base Voltage, VCBO (V) Capacitance, COB (pF) Collector Output Capacitance f=1MHz IE=0 IB=-3.0mA IB=-2.5mA IB=-2.0mA IB=-1.5mA IB=-1.0mA IB=-0.5mA

S8550 PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 2 0 1 - 0 1 4 . B UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.