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WEJ ELECTRONIC CO.,LTD S8550 TRANSISTOR (PNP) FEATURE Power dissipation P CM: 0 . 6 2 5 W ( T a m b = 2 5 ℃ ) Collector current I CM: - 0 . 5 A Collector-base voltage V (BR)CBO: - 4 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= -100µA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1 mA, I B=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 -5 V Collector cut-off current ICBO V CB= -40V, IE=0 -0.1 µA Collector cut-off current ICEO V CE= -20V, IB=0 -0.1 µA Emitter cut-off current IEBO V EB= - 3V, IC=0 -0.1 µA hFE(1) V CE= -1V, IC= -50mA 85 300 DC current gain hFE(2) V CE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) I C=-500mA, IB=-50mA -0.6 V Base-emitter saturation voltage VBE(sat) I C=-500mA, IB=-50mA -1.2 V Transition frequency fT VCE=- 6 V, IC=-20mA f =30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank B C D Range 85-160 120-200 160-300 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR S8550 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS