S8550 SHUNYE | Alldatasheet
Document overview
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Technical content
- BASE 2. EMITTER 3. COLLECTOR
FEATURES
z Complimentary to S8050 z Collector current: I C =0.5A MARKING : 2TY MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base V oltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage V I C Collector Current -Continuous -0.5 A P C Collector Power Dissipation 0.3 W Operation Junction and Storage Temperature Range T J T stg -55-150 ELECTRICAL CHARACTERISTICS (T a =25 unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Max Unit Collector-base breakdow n voltage V (BR)CBO I C = -100 μ A, I E -40 V Collector-emitter breakdow n voltage V (BR)CEO I C =-1mA, I B -25 V Emitter-base breakdow n voltage V (BR)EBO I E = -100 μ A, I C V Collector cut-off current I CBO V CB = -40V, I E -0.1 μ A Collector cut-off current I CEO V CE = -20V, I B -0.1 μ A Emitter cut-off current I EBO V EB = -3V, I C -0.1 μ A h FE(1) V CE = -1V, I C = -50mA 120 400 DC current gain h FE(2) V CE = -1V, I C = -500mA 50 Collector-emitter saturation v oltage V CE (sat) I C =-500mA, I B = -50mA -0.6 V Base-emitter saturation v oltage V BE (sat) I C =-500mA, I B = -50mA -1.2 V Transition frequenc y f T V CE = -6V, I C = -20mA 30MHz 150 MHz CLASSIFICATION OF h FE (1) Rank L H J Range 120-200 200-350 300-400 S8550 TRANSISTOR PNP www.shunyegroup.com.cn V2.22
-10 -12 -300 -600 -900 -1200 -10 -100 -10 -100 100 -0.1 -10 100 125 150 100 200 300 400 -10 -100 -400 -800 -1200 -10 -100 -10 -100 -10 -100 100 -90 -80 -70 -60 -50 -40 -30 -10 COMMON EMITTER T a =25 -400uA -360uA -320uA -280uA -240uA -200uA -160uA -120uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) I C V CE I B =-40uA -80uA -500 V BE I C T a T a COMMON EMITTER V CE =-1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLT AGE V BE (mV) I C COMMON EMITTER V CE =-6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 400 -20 V CB EB C ob ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) C ib C ob f=1MHz I E =0/I C T a =25 P C —— T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) f T -500 T a T a β =10 I C V BEsat BASE-EMITTER SATURATIO N VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) -500 -500 β =10 T a T a I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat m COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =-1V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =25 T a =100 h FE I C 500 -500 www.shunyegroup.com.cn V2.22 S8550
A 0.900 150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e 1.800 2.000 0.071 0.079 L 0.300 0.500 0.012 0.020 θ
0.550 REF
0.022 REF
0.950 TYP
0.037 TYP
T -23 Package Outline Dimensions SO T -23 Suggested Pad Layout www.shunyegroup.com.cn V2.22 S8550
www.shunyegroup.com.cn V2.22 S8550