S8550 SECOS | Alldatasheet
Document overview
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Technical content
Any changing of specification will not be informed individual S8550 PNP Silicon Plastic-Encapsulate Transistors Complimentary to S8050 Collector Current: IC=0.5A
FEATURES
A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S GV 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2007 Rev. A Page 1 of 2 MARKING: 2TY MAXIMUM RATINGS (TA=25 C O unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40 V , IE=0 -0.1 μA Collector cut-off current ICEO VCB=-20V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -3V , IC=0 -0.1 μA HFE(1) VCE=-1V, IC= -50mA 120 350 DC current gain HFE(2) VCE=-1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50mA -1.2 V Transition frequency fT VCE=-6V, I C= -20mA f=30MHz
150 MHz
A suffix of "-C" specifies halogen & lead-free
http://www.SeCoSGmbH.com Elektronische Bauelemente Typical Characteristics 01-Jun-2007 Rev. A Page 2 of 2 Any changing of specification will not be informed individual S8550 PNP Silicon Plastic-Encapsulate Transistors CLASSIFICATION OF h FE(1) Rank L H Range 120-200 200- 350