S8550 UMW | Alldatasheet
Document overview
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Technical content
- BASE 2. EMITTER 3. COLLECTOR S8550 TRANSISTOR (PNP)
FEATURES
z Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC = -100μA, I E=0 -40 V Collector-emitter breakdown voltage V(BR)CEO I C =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current I CBO V CB= -40V, IE=0 -0.1 μA Collector cut-off current I CEO V CE= -20V, IB=0 -0.1 μA Emitter cut-off current I EBO V EB= -3V, IC=0 -0.1 μA h FE(1) V CE= -1V, IC= -50mA 120 400 DC current gain h FE(2) V CE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) I C=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V Transition frequency f T VCE= -6V, IC= -20mA f=30MHz
150 MHz
CLASSIFICATION OF h FE(1) Rank L H J Range 120-200 200-350 300-400 SOT-23 Plastic-Encapsulate Transistors UMW R UMW S8550 1www.umw-ic.com 友台半导体有限公司
-0 -300 -600 -900 -1200 -10 -100 -1 -10 -100 100 -0.1 -1 -10 0 25 50 75 100 125 150 100 200 300 -1 -10 -100 -400 -800 -1200 -1 -10 -100 -10 -100 -1 -10 -100 100 -90 -80 -70 -60 -50 -40 -30 -20 -10 COMMON EMITTER Ta=25℃ -400uA -360uA -320uA -280uA -240uA -200uA -160uA -120uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) IC —— VCE IB=-40uA -80uA -500 VBE IC —— T a=25℃ T a=100 ℃ COMMON EMITTER VCE=-1V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC COMMON EMITTER VCE=-6V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) 400 -20 VCB/VEBCob/Cib —— REVERSE VOLTAGE V (V) CAPACITANCE C (pF) Cib Cob f=1MHz IE=0/IC=0 Ta=25 ℃ PC —— T a COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE T ( )℃ fT —— -500 Ta =100 ℃ Ta =25℃ β=10 ICVBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) -500 -500 β=10 Ta =25℃ Ta =100 ℃ ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=-1V DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ hFE —— IC 500 -500 400 www.umw-ic.com 2 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW S8550
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout 3www.umw-ic.com 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW S8550
4www.umw-ic.com 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW S8550