S8550 FCI | Alldatasheet
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Technical content
UTC S8550 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-014,A LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to UTC S8050 TO-92 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNIT Collector-Base Voltage V CBO -30 V Collector-Emitter Voltage V CEO -20 V Emitter-Base Voltage V EBO -5 V Collector Dissipation(Ta=25°C) Pc 1 W Collector Current Ic -700 mA Junction Temperature T j 150 °C Storage Temperature T STG -65 ~ +150 °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO Ic=-100µA,IE=0 -30 V Collector-Emitter Breakdown Voltage BV CEO Ic=-1mA,I B=0 -20 V Emitter-Base Breakdown Voltage BV EBO IE=-100µA,Ic=0 -5 V Collector Cut-Off Current I CBO V CB=-30V,IE=0 -1 µA Emitter Cut-Off Current I EBO V EB=-5V,Ic=0 -100 nA DC Current Gain(note) hFE 1 hFE2 hFE3 VCE=-1V,Ic=-1mA VCE=-1V,Ic=-150 mA VCE=-1V,Ic=-500mA 100 120 110 400 Collector-Emitter Saturation Voltage V CE(sat) Ic=-500mA,I B=-50mA -0.5 V Base-Emitter Saturation Voltage V BE(sat) Ic=500mA,I B=-50mA -1.2 V Base-Emitter Saturation Voltage V BE V CE=-1V,Ic=-10mA -1.0 V Current Gain Bandwidth Product f T V CE=-10V,Ic=-50mA 100 MHz Output Capacitance Cob V CB=10V,IE=0 f=1MHz 9.0 pF
UTC S8550 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-014,A CLASSIFICATION OF hFE2 RANK C D E RANGE 120-200 160-300 280-400 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics Collector-Emitter voltage ( V) Ic,Collector current (mA) 0.1 0.2 0.3 0.4 0.5 IB=0.5mA IB=1.0mA IB=1.5mA IB=2.0mA IB=2.5mA IB=3.0mA Fig.2 DC current Gain Ic,Collector current (mA) HFE, DC current Gain 102 101 100 103 10310210110010-1 VCE=1V Fig.3 Base-Emitter on Voltage 10-1 100 101 102 Ic,Collector current (mA) Base-Emitter voltage (V) VCE=1V Ic,Collector current (mA) 103 10210110010-1 Saturation voltage (mV) 101 102 103 104 Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance VCE(sat) VBE(sat) Ic=10*IB Ic,Collector current (mA) 100 101 102 103 Current Gain-bandwidth product,fT(MHz) 100 101 102 VCE=10V Collector-Base voltage (V) Cob,Capacitance (pF) 103 103 100 101 102 100 101 102 103 f=1MHz IE=0