S8550 DCCOM | Alldatasheet

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Technical content

R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in 2W output amplifier of portable radios in class B push-pull operation. Pinning 1 = Emitter 2 = Base 3 = Collector TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27) Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min o Typ o Typ. o Typ 3 2 1 o Typ. Dimensions in inches and (millimeters) Rank B C D E Range 85~160 120~200 160~300 300~400 Classification of hFE2 Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 0.8 A Base Current IB 500 mA Total Power Dissipation PD 1 W Total Power Dissipation(TC=25oC) P D 2 W Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BV CBO 40 - - V I C=-100µA Collector-Emitter Breakdown Voltage BV CEO 25 - - V I C=-2mA Emitter-Base Breakdown Volatge BV EBO 5 - - V I E=-100µA Collector Cutoff Current ICBO - - -0.1 µA V CB=-35V Emitter Cutoff Current IEBO - - -0.1 µA V EB=-6V Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.5 V I C =-0.8A, IB=-80mA Base-Emitter Saturation Voltage(1) VBE(sat) - - -1.2 V I C =-0.8A, IB=-80mA Base-Emitter On Voltage(1) VBE(on) - - -1 V I C=-10mA, VCE =-1V hFE1 45 - - - I C=-5mA, VCE=-1V DC Current Gain(1) hFE2 85 - 400 - I C =-100mA, VCE=-1V hFE3 40 - - - I C=-500mA, VCE=-1V Transition Frequency fT 100 - - MHz I C=-50mA, VCE=-10V

Electrical Characteristics

(Ratings at 25 oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%

R DC COMPONENTS CO., LTD. S8550 Electrical Characteristic Curves 50 100 150 Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve Ambient Temperature Ta (°C) 800 400 1200 200 600 1000 -1000 100 300 -1 -10 Collector Current I C (mA) DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current -100 150 200 V CE = -1 V Ta = 75°C -25°C 25°C 250 -100 100 -0.1 -1 Collector to Base Voltage V CB (V) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage -10 f = 1 MHz I E = 0 1mA 0.5mA I B =0.1mA Typical Output Characteristics Collector to Emitter Voltage V CE (V) Collector Current I C (mA) -40 -80 -120 -160 -200