S8050T SECOS | Alldatasheet
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General Purpose Transistor 01-June-2005 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 2.54 (1.27 Typ.) 132 1: Emitter 2: Base 3: Collector 1.25 4.55 0.2 0.1 0.1 0.20.2 0.2 0.2 3.5 4.514.3 0.46 0.43 0.07 0.08 TO-92 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free
FEATURES
z Collector Current: IC = 0.5 A ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage V CBO 40 V Collector to Emitter Voltage V CEO 25 V Emitter to Base Voltage V EBO 5 V Collector Currrent I C 500 mA Total Power Dissipation P D 625 mW Junction, Storage Temperature T J, TSTG +150, -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V (BR)CBO 40 - - V I C = 100 μA, IE = 0 Collector-emitter Breakdown Voltage V (BR)CEO 25 - - V I C = 0.1 mA, IB = 0 Emitter-base Breakdown Voltage V (BR)EBO 5 - - V I E = 100 μA, IC = 0 Collector Cut-off Current I CBO - - 0.1 μA VCB = 40 V, IE = 0 Collector Cut-off Current I CEO - - 0.1 μA VCE = 20 V, IB = 0 Emitter Cut-off Current I EBO - - 0.1 μA VEB = 5 V, IC = 0 hFE(1) 85 - 400 V CE = 1 V, IC = 50 mA DC Current Gain hFE(2) 50 - - V CE = 1 V, IC = 500 mA Collector-emitter Saturation Voltage V CE(sat) - - 0.6 V I C = 500 mA, IB = 50 mA Base-emitter Saturation Voltage V BE(sat) - - 1.2 V I C = 500 mA, IB = 50 mA Transition Frequency f T 150 - - MHz V CE = 6 V, IC= 20 mA, f = 30 MHz CLASSIFICATION OF hFE Rank B C D D3 Range 85 - 160 120 - 200 160 - 300 300 - 400
General Purpose Transistor 01-June-2005 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES S8050T