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UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R201-013.D LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550 TO-92 ORDERING INFORMATION Order Number Package Pin Assignment Packing Lead Free Plating Halogen Free 1 2 3 S8050L-x-T92-B S8050G-x-T92-B TO-92 E B C Tape Box S8050L-x-T92-K S8050G-x-T92-K TO-92 E B C Bulk Note: Pin Assignment: E: Emitter B : B a s e C : C o l l e c t o r MARKING INFORMATION PACKAGE MARKING TO-92
S8050 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 2 0 1 - 0 1 3 . D ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 5 V Collector Current I C 700 mA Collector Dissipation(TA=25°C) P C 1 W Junction Temperature T J 150 °C Storage Temperature T STG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO IC=100A, IE=0 30 V Collector-Emitter Breakdown Voltage BV CEO IC=1mA, IB=0 20 V Emitter-Base Breakdown Voltage BV EBO IE=100μA, Ic=0 5 V Collector Cut-Off Current I CBO V CB=30V, IE=0 1 μA Emitter Cut-Off Current I EBO V EB=5V, IC=0 100 nA DC Current Gain hFE1 V CE=1V, IC=1mA 100 hFE2 V CE=1V, IC=150 mA 120 400 hFE3 V CE=1V, IC=500mA 40 Collector-Emitter Saturation Voltage V CE(SAT)I C=500mA, IB=50mA 0.5 V Base-Emitter Saturation Voltage V BE(SAT)I C=500mA, IB=50mA 1.2 V Base-Emitter Saturation Voltage V BE V CE=1V, IC=10mA 1.0 V Current Gain Bandwidth Product f T V CE=10V, IC=50mA 100 MHz Output Capacitance C ob V CB=10V, IE=0, f=1MHz 9.0 pF CLASSIFICATION OF hFE2 RANK C D E RANGE 120-200 160-300 280-400
S8050 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 2 0 1 - 0 1 3 . D TYPICAL CHARACTERISTICS Static Characteristics Collector-Emitter Voltage, VCE ( V) Collector Current, Ic (mA) 0.1 0.2 0.3 0.4 0.5 IB=0.5mA IB=1.0mA IB=1.5mA IB=2.0mA IB=2.5mA IB=3.0mA DC Current Gain Collector Current, Ic (mA) DC current Gain, hFE VCE=1V 10-1 100 101 102 103100 101 102 103 Base-Emitter on Voltage Collector Current, Ic (mA) Base-Emitter Voltage, VBE (V) VCE=1V Collector Current, Ic (mA) Saturation Voltage (mV) Saturation Voltage VCE(SAT) VBE(SAT) Ic=10*IB 100 101 102 10-1 10-1 100 101 102 103101 102 103 104 Current Gain-Bandwidth Product Collector Output Capacitance Collector Current, Ic (mA) Current Gain-Bandwidth Product, fT (MHz) VCE=10V Collector-Base Voltage (V) Capacitance, Cob (pF) f=1MHz IE=0 100 101 102 103100 101 102 103 100 101 102 103100 101 102 103
S8050 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 2 0 1 - 0 1 3 . D UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.