S8050A GSME | Alldatasheet
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桂林斯壯微電子有限責任公司 Guilin Strong Micro-Electronics Co.,Ltd. S 8050 A
FEATURES
特點 Low Frequency Power Amplifier 低頻功率放大 Suitable for Driver Stage o f Small Motor 小馬達驅動 Complementary to S 8550 A 与 S A 互补 最大額定值 a =25 CHARACTERISTIC 特性參數 Symbol 符號 Rating 額定值 Unit 單位 Collector-Base Voltage 集電極 基極電壓 V CBO Vdc Collect-Emitter Voltage 集電極 發射極電壓 V CEO Vdc Emitter-Base Voltage 發射極 基極電壓 V EBO 5.0 Vdc Collector Current 集電極電流 Ic mAdc Collector Power Dissipation 集電極耗散功率 P C 225 mW Junction Temperature 結溫 T j 150 Storage Temperature Range 儲存溫度 T stg -55 150 DEVICE MARKING 打標 S8050 A J3Y
桂林斯壯微電子有限責任公司 Guilin Strong Micro-Electronics Co.,Ltd. S 8050 A ELECTRICAL CHARACTERISTICS 電特性 A =25 unless otherwise noted 如無特殊說明，溫度爲 Characterstic 特性參數 Symbol 符號 Test Condition 測試條件 Min 最小值 T yp. 典型值 Max 最大值 Uni t 單位 Collector Cutoff Current 集電極截止電流 I CBO V CB =30V,I E 0.1 μ A Emitter Cutoff Current 發射極截止電流 I EBO V EB =5V,I C 0.1 μ A Collector-Base Breakdown Voltage 集電極 基極擊穿電壓 V (BR)CBO I C =100 μ A V Collector-Emitter Breakdown Voltage 集電極 發射極擊穿電壓 V (BR)CEO I C =10mA V Emitter-Base Breakdown Voltage 發射極 基極擊穿電壓 V (BR)EBO I E =100 μ A V DC Current Gain 直流電流增益 H F E (1) V CE =1V, I C 0mA H F E (2) V CE =1V, Ic=500mA Collector-Emitter Saturation Voltage 集電極 發射極飽和壓降 V CE(sat) I C =500mA, I B =50mA 0.6 V Base -Emitter Saturation Voltage 基極 發射極飽和壓降 V B E(sat) I C =500mA, I B =50mA 1.2 V Base-Emitter Voltage 基極 發射極電壓 V BE V CE =1V, I C =10mA 0.8 1.0 V Transition Frequency 特徵頻率 f T V CE =5V, I C =10mA 100 120 MHz Collector Output Capacitance 輸出電容 C ob V CB =10V,I E =0, f=1MHz pF