S8050 UTC | Alldatasheet
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Technical content
UTC S8050 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-013,A LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to S8550 TO-92 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 5 V Collector Dissipation(Ta=25°C) Pc 1 W Collector Current Ic 700 mA Junction Temperature T j 150 °C Storage Temperature T STG -65 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO Ic=100 µA,IE=0 30 V Collector-Emitter Breakdown Voltage BV CEO Ic=1mA,I B=0 20 V Emitter-Base Breakdown Voltage BV EBO I E=100µA,Ic=0 5 V Collector Cut-Off Current I CBO V CB=30V,IE=0 1 µA Emitter Cut-Off Current I EBO V EB=5V,Ic=0 100 nA DC Current Gain(note) hFE 1 hFE2 hFE3 VCE=1V,Ic=1mA VCE=1V,Ic=150 mA VCE=1V,Ic=500mA 100 120 110 400 Collector-Emitter Saturation Voltage V CE(sat) Ic=500mA,I B=50mA 0.5 V Base-Emitter Saturation Voltage V BE(sat) Ic=500mA,I B=50mA 1.2 V Base-Emitter Saturation Voltage V BE V CE=1V,Ic=10mA 1.0 V Current Gain Bandwidth Product f T V CE=10V,Ic=50mA 100 MHz Output Capacitance Cob V CB=10V,IE=0 f=1MHz 9.0 pF
UTC S8050 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-013,A CLASSIFICATION OF hFE2 RANK C D E RANGE 120-200 160-300 280-400 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics Collector-Emitter voltage ( V) Ic,Collector current (mA) 0.1 0.2 0.3 0.4 0.5 IB=0.5mA IB=1.0mA IB=1.5mA IB=2.0mA IB=2.5mA IB=3.0mA Fig.2 DC current Gain Ic,Collector current (mA) HFE, DC current Gain 102 101 100 103 10310210110010-1 VCE=1V Fig.3 Base-Emitter on Voltage 10-1 100 101 102 Ic,Collector current (mA) Base-Emitter voltage (V) VCE=1V Ic,Collector current (mA) 103 10210110010-1 Saturation voltage (mV) 101 102 103 104 Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance VCE(sat) VBE(sat) Ic=10*IB Ic,Collector current (mA) 100 101 102 103 Current Gain-bandwidth product,fT(MHz) 100 101 102 VCE=10V Collector-Base voltage (V) Cob,Capacitance (pF) 103 103 100 101 102 100 101 102 103 f=1MHz IE=0 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.