S8050 SUNMATE | Alldatasheet
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Technical content
Features
/c183 /c183 /c183 A E J L TOP VIEW M B C H G D K SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 /c97 0/c176 8/c176 All Dimensions in mm Maximum Ratings and Electrical Characteristics T A = 25/c176C unless otherwise specified High Collector Current.(I C = 500mA). Complementary To S8550. Excellent H FE Linearity. High total power dissipation.(P C =300mW) /c183 V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 500 mA P C Collector Dissipation 300 mW T T stg Junction and Storage Temperature -55~150 ℃ Symbol Value Units Parameter
T
Electrical Characteristics
A = 25/c176C unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA,I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 5 V Collector cut-off current I CBO V CB =40V,I E =0 0.1 μA Collector cut-off current I CEO V CE =20V,I B =0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA DC current gain h FE V CE =1V,I C =50mA V CE =1V,I C =500mA 120 350 Collector-emitter saturation voltage V CE(sat) I C =500mA, I B = 50mA 0.6 V Base-emitter saturation voltage V BE(sat) I C =500mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA f=30MHz 150 MHz Rank L H Range 120-200 200-350
@ Ta=25℃ unless otherwise specified