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WEJ ELECTRONIC CO.,LTD S8050 TRANSISTOR (NPN)
FEATURES
P CM: 0.625 W (Tamb=25 ℃ ) Collector current I CM: 0 . 5 A Collector-base voltage V (BR)CBO: 4 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, I B=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO V CB= 40V, IE=0 0.1 µA Collector cut-off current ICEO V CE= 20V, IB=0 0.1 µA Emitter cut-off current IEBO V EB= 5V, IC=0 0.1 µA hFE(1) V CE= 1V, IC= 50mA 85 300 DC current gain hFE(2) V CE= 1V, IC= 500mA 50 Collector-emitter saturation voltage VCE(sat) I C=500mA, IB=50 mA 0.6 V Base-emitter saturation voltage VBE(sat) I C=500mA, IB=50 mA 1.2 V Transition frequency fT VCE= 6 V, IC=20mA f =30MHz 150 MHz CLASSIFICATION OF h FE(1) Rank B C D Range 85-160 120-200 160-300 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR S8050 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. ,LTD RoHS
WEJ ELECTRONIC CO.,LTD Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 10 100 10000.4 0.6 0.8 1.2 I - COLLECTOR CURRENT (mA) V - BA SE EMITTER VOLTAGE (V) C BESAT ββ = 10 - 40 ºC 25 °C 1 10 100 1000 100 150 200 250 300 I - COLLECTOR CURRENT (A) h - TYPICAL PULSED CURRENT GAIN FE - 40 ºC 25 °C C V = 1VCE 125 °C Collector-Emitter Saturation Voltage vs Collector Current 10 100 1000 0.1 0.2 0.3 0.4 I - COLLECTOR CURRENT (mA) V - COLLECTOR EMITTER VOLTAGE (V)CCESAT ββ = 10 - 40 ºC 25 °C 125 °C Base Emitter ON Voltage vs Collector Current 1 10 100 1000 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER ON VOL TAGE (V) C BEON V = 1VCE - 40 ºC 25 °C Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO.,LTD Typical Pulsed Current Gain vs Collector Current S8050 RoHS