S8050 YIXIN | Alldatasheet
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axial Planar Transistor S8050 FEA TURES z High Collector Current.(IC= 500mA） z Complementary To S8550. z Excellent H FE Linearity z High total power dissipation.(P C=3 00mW) APPLICA TIONS z H i g h C o l l e c t o r C u r r e n t . ORDERING INFORMA TION Type No. Marking Package Code S 8 0 5 0 J 3 Y S O T - 2 3 MAXIMUM RA TING @ T a=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Ba se Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Cur rent -Continuous 500 mA PC Collector Dissipation 300 mW Tj,Tstg Junction and Storage Temperatur e -55~150 ℃ 1of 2 ELECTRICAL CHARACTERISTICS @ T a=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-ba se breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-em itter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 B 25 V Emitter-base breakdow n voltage V (BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=40V ,IE= 0 0.1 μA Collector cut-off current ICEO VCE=20V ,IB= 0 B 0.1 μA Emitter cut-off current IEBO VEB=5V ,IC=0 0.1 μA VCE=1V ,IC=5 0mA 120 350 DC c urrent gain hFE VCE=1V ,IC=5 00mA 50 Collector-em itter saturation voltage VCE(s at) IC=500mA, IB= 50mA B 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB= 50mA B 1.2 V Transition frequency fT VCE=6V, IC= 20mA f=30MHz 150 MHz A E J L TO P VIEW M B C H G D K C B E SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 /c97 0/c176 8/c176 All Dimensions in m m EB C A ll data sheet.com
TION OF h FE(1) Rank L H Rang e 120-200 200-350 2of 2 TYPICAL CHARACTERISTICS @ T a=25℃ unless otherwise specified Silicon Epit axial Planar Transistor S8050 A ll data sheet.com