S8050 SHUNYE | Alldatasheet

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FEATURES

z Complimentary to S8550 z Collector Current: I C =0.5A MARKING: J3Y ELECTRICAL CHARACTERISTICS (T a =25 unless otherwis e specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M in T yp M ax U nit Collector-base br eakdown voltage V (BR)CBO I C = 100 μ A, I E V Collector-emitter brea kdown voltage V (BR)CEO I C =1mA, I B V Emitter-base breakd o wn voltage V (BR)EBO I E =100 μ A, I C V Collector cut-off curren t I CBO V CB =40 V , I E 0.1 μ A Collector cut-off curren t I CEO V CB =20V , I E 0.1 μ A Emitter cut-off current I EBO V EB = 5V , I C 0.1 μ A h FE(1) V CE =1V, I C = 50mA 120 400 DC current gain h FE(2) V CE =1V, I C = 500mA 50 Collector-emitter saturatio n voltage V CE (sat) I C =500 mA, I B = 50mA 0.6 V Base-emitter saturatio n voltage V BE (sat) I C =500 mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA 30MHz 150 MHz SO T -23 1. BASE 2. EMITTER 3. COLLECT OR CLASSIFICATION OF h FE (1) Rank L H J Range 120-200 200-350 300-400 MAXIMU M RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Coll ector-Base Voltage V V CEO Colle ctor-Emitter Voltage V V EBO Emit ter-Base Voltage V I C Collect or Current 500 mA P C Collect or Power Dissipation 300 mW R ΘJA Ther mal Resistance From Junction To Ambient 417 T J T stg Operation Junction and Storage Temperature Range -55 +150 www.shunyegroup.com.cn V2.22 S8050 TRANSISTOR NPN

0.1 100 100 125 150 100 200 300 400 0.2 0.4 0.6 0.8 1.0 0.1 100 100 0.0 0.4 0.8 1.2 048 1 2 1 6 2 100 f T —— I C h FE COMMON EMITTER V CE =1V 500 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C 300 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β =10 T a =25 T a =100 I C V CEsat 500 500 100 0.3 C ob C ib REVERSE VOLTAGE V (V f=1MHz I E =0/ I C T a =25 V CB / V EB C ob / C ib CAPACITANCE C (pF) 1000 100 V CE =6V T a =25 TRANSITION FREQ UE NCY f T (MHz) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATIO N P C (mW) AMBIENT TEM PERAT URE T a ( ) P C —— T a 500 V BE I C 0.3 T a =25 T a =100 COMMON EMITTER V CE =1V COLLECTOR CURRENT I C (mA) BASE-EMMIT E R VOLTAGE V BE (V) β =10 BASE-EMITTER SAT URAT ION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) T a =25 T a =100 500 I C V BEsat Stati c Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EM ITTER VOLTAGE V CE (V) 400uA 350uA 300uA 250uA 200uA 150uA 100uA I B =50uA COMMON EMITTER T a =25 www.shunyegroup.com.cn V2.22 S8050

M a x A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e 1.800 2.000 0.071 0.079 L 0.300 0.500 0.012 0.020 θ

0.550 REF

0.022 REF

0.950 TYP

0.037 TYP

T -23 Package Outline Dimensions SO T -23 Suggested Pad Layout www.shunyegroup.com.cn V2.22 S8050

www.shunyegroup.com.cn V2.22 S8050