S8050 DGNJDZ | Alldatasheet

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Technical content

SOT-23 Plastic-Encapsulate Transistors S8050 TRANSI STOR (NPN)

FEATURES

z Complimentary to S8550 z Collector Current: I C =0.5A MARKING: J3Y MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.5 A P C Collector Dissipation 0.3 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C = 100 μ A, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =40 V , I E =0 0.1 μ A Collector cut-off current I CEO V CB =20V , I E =0 0.1 μ A Emitter cut-off current I EBO V EB = 5V , I C =0 0.1 μ A H FE(1) V CE =1V, I C = 50mA 120 350 DC current gain H FE(2) V CE =1V, I C = 500mA 50 Collector-emitter saturation voltage V CE (sat) I=500 mA, I B = 50mA 0.6 V Base-emitter saturation voltage V BE (sat) I C =500 mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA 30MHz

150 MHz

FE(1) Rank L H Range 120-200 200-350 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR B,Dec,2011 DONGGUAN NANJING ELECTRONICS LTD.,

0.1 1 10 100 0 25 50 75 100 125 150 100 200 300 400 0.1 100 1 10 100 0.0 0.4 0.8 1.2 048 1 2 1 6 2 0 100 f T —— I C h FE COMMON EMITTER V CE =1V 3 30 500 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 T a =25 T a =100 I C V CEsat 500 500 100 30.3 20 C ob C ib REVERSE VOLTAGE V (V) f=1MHz I E =0/ I C T a =25 V CB / V EB C ob / C ib CAPACITANCE C (pF) 1000 100 V CE =6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) S8050Typical Characterisitics COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C —— T a 500 V BE I C 0.3 T a =25 T a =100 COMMON EMITTER V CE =1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) 303 β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) T a =25 T a =100 500 I C V BEsat Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 400uA 350uA 300uA 250uA 200uA 150uA 100uA I B =50uA COMMON EMITTER T a =25 B,Dec,2011