S8050 JIANGSU | Alldatasheet
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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN)
FEATURES
z Complimentary to S8550 z Collector Current: I C =0.5A MARKING: J3Y ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C = 100 μ A, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =40 V , I E =0 0.1 μ A Collector cut-off current I CEO V CB =20V , I E =0 0.1 μ A Emitter cut-off current I EBO V EB = 5V , I C =0 0.1 μ A h FE(1) V CE =1V, I C = 50mA 120 400 DC current gain h FE(2) V CE =1V, I C = 500mA 50 Collector-emitter saturation voltage V CE (sat) IC=500 mA, I B = 50mA 0.6 V Base-emitter saturation voltage V BE (sat) I C =500 mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA 30MHz
150 MHz
- BASE 2. EMITTER 3. COLLECTOR CLASSIFICATION OF h FE (1) Rank L H J Range 120-200 200- 350 300- 400 www.cj-elec.com 1 A,Jun,2014www.cj-elec.com D,Oct,2014 JCET MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃
0.1 1 10 100 0 25 50 75 100 125 150 100 200 300 400 0.1 100 1 10 100 0.0 0.4 0.8 1.2 04 8 1 2 1 6 2 0 100 f T —— I C h FE COMMON EMITTER V CE =1V 3 30 500 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 T a =25 T a =100 I C V CEsat 500 500 100 30.3 20 C ob C ib REVERSE VOLTAGE V (V) f=1MHz I E =0/ I C T a =25 V CB / V EB C ob / C ib CAPACITANCE C (pF) 1000 100 V CE =6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C —— T a 500 V BE I C 0.3 T a =25 T a =100 COMMON EMITTER V CE =1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) 303 β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) T a =25 T a =100 500 I C V BEsat Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 400uA 350uA 300uA 250uA 200uA 150uA 100uA I B =50uA COMMON EMITTER T a =25 www.cj-elec.com 2 A,Jun,2014www.cj-elec.com D,Oct,2014 Typical Characteristics
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com D,Oct,2014
www.cj-elec.com 4 A,Jun,2014www.cj-elec.com D,Oct,2014