S8050-L-HF COMCHIP | Alldatasheet

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Technical content

Features

  • Collector current: IC=0.5A - High total power dissipation: PC=300mW - Excellent HFE linearity. Mechanical data - Case: SOT-23, molded plastic. - Mounting position: Any. REV:B Page 1QW-JTR109

Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Max Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter cut-off current 0.1 V V V µA V(BR)CEO V(BR)CBO V(BR)EBO IEBO IC = 1mA, IB = 0 IC = 100μA, IE = 0 IE = 100μA, IC = 0 VCE = 20V, IB = 0 Min Collector cut-off current DC current gain 0.1 400 ICEO hFE(1) VEB = 5V, IC = 0 120 Collector-emitter saturation voltage Base-emitter saturation voltage 0.6 1.2 V V VCE(sat) VBE(sat) IC = 500mA, IB = 50mA Transition frequency fT VCE = 6V, IC = 20mA, f = 30MHz 150 hFE(2) 50 Collector cut-off current 0.1 ICBO VCB = 40V, IE = 0 VCE = 1V, IC = 50mA MHz VCE = 1V, IC = 500mA IC = 500mA, IB = 50mA Range Rank Classification of hFE (1) S8050-L-HF S8050-J-HF 120-200 200-350 S8050-H-HF 300-400 µA µA Rating and Characteristic Curves (S8050-L/H/J-HF) Collector-Emitter Voltage, VCE (V) Collector Current, IC (mA) Fig.1 - Static Characteristic 0 4 8 12 16 20 100 Common Emitter Ta = 25°C400µA 100µA 150µA 200µA 250µA 300µA 350µA IB=50µA DC Current Gain, hFE 100 1000 Collector Current, IC (mA) Fig.2 - hFE ― IC 100 500 Common Emitter VCE=1V Ta=25°C Ta=100°C Comchip Technology CO., LTD. General Purpose Transistors QW-JTR109 REV:B Page 2

Rating and Characteristic Curves (S8050-L/H/J-HF) 0.4 1.2 Collector Current, IC (mA) 10 100 Fig.4 - VBEsat ― IC 500 0.8 Ta=25°C Ta=100°C β=10 Base-Emitter Saturation Voltage, VBE(sat) (V) 100 Reverse Voltage, V (V) 0.1 1 10 Fig.6 - Cob/Cib ― VCB/VEB Capacitance, C (pF) Cob Cib f=1MHz IE=0/IC=0 Ta=25°C Collector Power Dissipation, PC (mW) 100 400 Ambient Temperature, Ta (°C) 50 100 150 Fig.8 - PC ― Ta 75 12525 300 200 Fig.3 - VCEsat ― IC Collector Current, Ic (mA) 1 10 100 500 100 500 Collector-Emitter Saturation Voltage, VCE(sat) (mV) Ta=25°C Ta=100°C β=10 0.2 0.6 1.0 0.1 500 100 0.4 Collector Current, IC (mA) Fig.5 - IC ― VBE 0.8 Ta=25°C Ta=100°C Common Emitter VCE=1V Base-Emitter Voltage, VBE (V) 10 100 Fig.7 - fT ― IC Collector Current, Ic (mA) Transition Frequency, fT (MHz) 1000 100 Ta=25°C VCE=6V Comchip Technology CO., LTD. General Purpose Transistors QW-JTR109 REV:B Page 3

Comchip Technology CO., LTD. General Purpose Transistors Reel Taping Specification (mm) (inch) SOT-23 SYMBOL (inch) SOT-23 SYMBOL A (mm) B C d D D1 D2 E F P P0 P1 W W1 − 0.004 0.484 ± 0.039 o D D1D2 A B C d E F P P0 P1 W QW-JTR109 REV:B Page 4

Comchip Technology CO., LTD. General Purpose Transistors Marking Code Standard Packaging Case Type SOT-23 REEL (pcs) Reel Size (inch) 73,000 REEL PACK Suggested P.C.B. PAD Layout A C B D E C SIZE (inch) 0.035 (mm) 0.90 0.80 0.95 0.031 0.037 SOT-23 2.00 0.079 A B C D 2.90 0.114E QW-JTR109 REV:B Page 5 J3Y J3Y Solid dot = Control code Part Number Marking Code S8050-L-HF J3YS8050-H-HF S8050-J-HF