S8050 GWSEMI | Alldatasheet
Document overview
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Technical content
FEATURES
Collector Current: I C =0.5A MARKING: J3Y MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Value Units V CBO Collector-Base Voltage V V CEO Collector-Emitter Voltage V V EBO Emitter-Base Voltage V I C Collector Current -Continuous 0.5 A P C Collector Dissipation 0.3 W T j Junction Temperature 150 T stg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = 100 µA , I E V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B V Emitter-base breakdown voltage V (BR)EBO I E =100 µA , I C V Collector cut-off current I CBO V CB =40 V, I E 0.1 µA Collector cut-off current I CEO V CB =20V, I E 0.1 µA Emitter cut-off current I EBO V EB = 5V, I C 0.1 µA H FE(1) V CE =1V, I C = 50mA 200 350 DC current gain H FE(2) V CE =1V, I C = 500mA Collector-emitter saturation voltage V CE (sat) I C =500 mA, I B = 50mA 0.6 V Base-emitter saturation voltage V BE (sat) I C =500 mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA 30MHz 150 MHz 1．BASE SOT-23 2．EMITTER 3．COLLECTOR S8050 TRANSISTOR(NPN) Symbol Parameter Test conditions
TRANSISTOR(NPN) Typical Characteristics
TRANSISTOR(NPN) Plastic surface mounted package; 3 leads SOT-23 PACKAGE OUTLINE