SS8050_V01 FAIRCHILD | Alldatasheet
Document overview
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Technical content
Features
- 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.
- Complimentary to SS8550
- Collector Current: I C = 1.5 A
Ordering Information
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Part Number Top Mark Package Packing Method SS8050BBU S8050 TO-92 3L Bulk SS8050CBU S8050 TO-92 3L Bulk SS8050CTA S8050 TO-92 3L Ammo SS8050DBU S8050 TO-92 3L Bulk SS8050DTA S8050 TO-92 3L Ammo Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature -65 to 150 °C 1. Emitter 2. Base 3. Collector TO-921
SS8050 — NPN Epitaxial Silicon Transistor © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com SS8050 Rev. 1.1.0 2 Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Note:
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. hFE Classification Symbol Parameter Value Unit PD Power Dissipation 1 W Derate Above 25°C8 m W / °C RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage I C = 100 μA, IE = 0 40 V BVCEO Collector-Emitter Breakdown Voltage I C = 2 mA, IB = 0 25 V BVEBO Emitter-Base Breakdown Voltage I E = 100 μA, IC = 0 6 V ICBO Collector Cut-Off Current V CB = 35 V, IE = 0 100 nA IEBO Emitter Cut-Off Current V EB = 6 V, IC = 0 100 nA hFE1 DC Current Gain VCE = 1 V, IC = 5 mA 45 hFE2 VCE = 1 V, IC = 100 mA 85 300 hFE3 VCE = 1 V, IC = 800 mA 40 VCE(sat) Collector-Emitter Saturation Voltage I C = 800 mA, IB = 80 mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage I C = 800 mA, IB = 80 mA 1.2 V VBE(on) Base-Emitter On Voltage V CE = 1 V, IC = 10 mA 1 V Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 9.0 pF fT Current Gain Bandwidth Product VCE = 10 V, IC = 50 mA 100 MHz Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300
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