S8050 DCCOM | Alldatasheet

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Technical content

R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in 2W output amplifier of portable radios in class B push-pull operation. Pinning 1 = Emitter 2 = Base 3 = Collector TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27) Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min o Typ o Typ. o Typ 3 2 1 o Typ. Dimensions in inches and (millimeters) Rank B C D E Range 85~160 120~200 160~300 300~400 Classification of hFE2 Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 0.5 A Base Current IB 500 mA Total Power Dissipation PD 1 W Total Power Dissipation(TC=25oC) P D 2 W Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BV CBO 40 - - V I C=100µA Collector-Emitter Breakdown Voltage BV CEO 25 - - V I C=2mA Emitter-Base Breakdown Volatge BV EBO 5 - - V I E=100µA Collector Cutoff Current ICBO - - 0.1 µA V CB=35V Emitter Cutoff Current IEBO - - 0.1 µA V EB=6V Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.5 V I C=0.8A, IB=80mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V I C=0.8A, IB=80mA Base-Emitter On Voltage(1) VBE(on) - - 1 V I C=10mA, VCE=1V hFE1 45 - - - I C=5mA, VCE=1V DC Current Gain(1) hFE2 85 - 400 - I C=100mA, VCE=1V hFE3 40 - - - I C=800mA, VCE=1V Transition Frequency fT 100 - - MHz I C=50mA, VCE=10V

Electrical Characteristics

(Ratings at 25 oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% S8050

R DC COMPONENTS CO., LTD. Collector Current I C (mA) Typical Output Characteristics Collector to Emitter Voltage V CE (V) 50 100 150 Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve Ambient Temperature Ta (°C) 800 400 1200 200 600 1000 1000 100 300 11 0 Collector Current I C (mA) DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 100 150 200 V CE = 1 V Ta = 75°C -25°C 25°C 250 100 100 0.1 1 Collector to Base Voltage V CB (V) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz I E = 0 S8050 Electrical Characteristic Curves 1mA 0.5mA I B =0.1mA 120 160 200