S8050 AITSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
AiT Semiconductor Inc. www.ait-ic.com S8050 GENERAL PURPOSE TRANSISTOR NPN TRANSISTOR REV1.0 - JUN 2017 RELEASED - - 1 - DESCRIPTION FEATURES The S8050 is available in SOT-23 package. High collector current (IC = 500mA) Excellent hFE Linearity High total power dissipation. (PC = 300mW) Available in SOT-23 package ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23 S8050 Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products High Collector Current PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com S8050 GENERAL PURPOSE TRANSISTOR NPN TRANSISTOR REV1.0 - JUN 2017 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise specified VCBO, Collector-Base Voltage 40V VCEO, Collector-Emitter Voltage 25V VEBO, Emitter-Base Voltage 5V IC, Collector Current-Continuous 500mA PC, Collector Dissipation 300mW TJ, TSTG, Junction and Storage Temperature -55℃~150℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0 40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=0.1mA, IB=0 25 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100μA, IC=0 5 - - V Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 μA Collector Cut-off Current ICEO VCE=20V, IB=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA DC Current Gain hFE VCE=1V, IC=50mA 200 - 350 VCE=1V, IC=500mA 50 - - Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA - - 1.2 V Transition Frequency fT VCE=6V, IC=20mA, f=30MHz 150 - - MHz
AiT Semiconductor Inc. www.ait-ic.com S8050 GENERAL PURPOSE TRANSISTOR NPN TRANSISTOR REV1.0 - JUN 2017 RELEASED - - 4 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) Symbol MIN MAX A 2.80 3.04 B 1.20 1.40 C 0.89 1.13 D 0.30 0.50 G 1.78 2.04 H 0.01 0.10 J 0.08 0.18 K 0.45 0.60 L 0.89 1.02 S 2.10 2.50 V 0.42 0.60
AiT Semiconductor Inc. www.ait-ic.com S8050 GENERAL PURPOSE TRANSISTOR NPN TRANSISTOR REV1.0 - JUN 2017 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to ob tain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or s ervere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product desi gn or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.