S802ECS LITTELFUSE | Alldatasheet

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Features

Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TC = 52°C 1. 5 A IT(AV) Average on-state current TC = 52°C 0.9 A ITSM Non repetitive surge peak on-state current (Sine half wave, TJ initial = 25°C) F= 50Hz 20 A F= 60Hz 24 A I2t I2t Value for fusing tp = 10 ms F = 50 Hz 2 A2s di/dt Critical rate of rise of on-state current IG = 10mA TJ = 125°C 80 A/µs IGM Peak Gate Current tp = 20 μs TJ = 125°C 0.5 A PG(AV) Average gate power dissipation — TJ = 125°C 0.2 W Tstg Storage junction temperature range — — -40 to 150 °C TJ Operating junction temperature range — — -40 to 125 °C Main Features Symbol Value Unit IT(RMS) 1. 5 A VDRM /V RRM 800 V VDSM (tp = 50 μs) 1250 V VRSM (tp = 50 μs) 900 V IGT 20 to 100 μA A K G Schematic Symbol

  • T hru-hole packages
  • Surge current capability < 20Amps
  • Blocking voltage ( VDRM / VRRM ) capability - up to 800V
  • Non-repetitive direct surge peak off-state voltage (VDSM) up to 1250V
  • Non-repetitive re verse surge peak off-state voltage (V RSM) up to 900V
  • High dv/dt noise immunity
  • Improved turn-off time (tq)
  • Sensitive gate for direct microprocessor interface
  • Halogen free and RoHS compliant S802ECS RoHS EV Series 1.5 Amp Sensitive SCRs S802ECS * TO92 with "GAK" pin output

Revised: 09/04/19 Specifications are subject to change without notice. ©2019 Littelfuse, Inc Thyristors EV Series 0.8 Amp Sensitive SCRs SxX8xSx Series Electrical Characteristics (TJ = 25°C, unless otherwise specified) Symbol Description Test Conditions Limit Value Unit IGT DC Gate Trigger Current VD = 6V RL = 100 Ω MIN. 20 μA MAX. 100 μA VGT DC Gate Trigger Voltage VD = 6V RL = 100 Ω MAX. 0.8 V VGRM Peak Reverse Gate Voltage IRG = 10μA MIN. 8 V IH Holding Current RGK = 1 KΩ Initial Current = 20mA MAX. 3 mA dv/dt Critical Rate-of-Rise of Off-State Voltage TJ = 125°C VD = 67% of VDRM Exp. Waveform RGK =1 kΩ MIN. 40 V/μs RGK =220 Ω MIN. 250 VGD Gate Non-Trigger Voltage VD = 1/2 VDRM RGK =1 kΩ TJ = 125°C MIN. 0.2 V tq Turn-Off Time IT = 0.5A MAX. 35 μs tgt Turn-On Time IG=10mA PW = 15μsec IT = 1 .6A(pk) TYP . 2.3 μs Static Characteristics (TJ = 25°C, unless otherwise specified) Symbol Description Test Conditions Limit Value Unit VTM Peak On-State Voltage 1.5A device ITM = 4A tp = 380 μs MAX. 1. 6 V VT0 Threshold Voltage MAX 1 .03 V RD Dynamic Resistance MAX 106 mΩ IDRM / IRRM Off-State Current, Peak Repetitive TJ = 25°C MAX. 3 μA TJ = 125°C MAX. 500 μA Thermal Resistances Symbol Description Test Conditions Value Unit Rth(JC) Junction to case (AC) IT = 1 .5A (RMS) 1 35 °C/W Rth(j-a) Junction to ambient IT = 1 .5A (RMS) 1 150 °C/W 1 60Hz AC resistive load condition, 100% conduction. EV Series 1.5 Amp Sensitive SCRs S802ECS

Revised: 09/04/19 Specifications are subject to change without notice. ©2019 Littelfuse, Inc Thyristors EV Series 0.8 Amp Sensitive SCRs SxX8xSx Series Figure 7: Surge Peak On-State Current vs. Number of Cycles Surge Current Duration - Full Cycle 1 10 100 1000 Peak Surge (Non-repetitive) On-State Current (ITS M) – Amps. Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State Current [IT(RMS)]: Max Rated Value at Specific Case Temperature Notes: 1 . Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. Soldering Parameters Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate 5°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Time (min to max) (ts) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do EV Series 1.5 Amp Sensitive SCRs S802ECS

Revised: 09/04/19 Specifications are subject to change without notice. ©2019 Littelfuse, Inc Thyristors EV Series 0.8 Amp Sensitive SCRs SxX8xSx Series Physical Specifications T erminal Finish 100% Matte Tin-plated. Body Material UL Recognized compound meeting flammability rating V-0. Lead Material Copper Alloy Reliability/Environmental T ests Test Specifications and Conditions AC Blocking MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 125°C for 1008 hours T emperature Cycling MIL-STD-750, M-1051, 1000 cycles; -55°C to +150°C; 15-min dwell-time T emperature/ Humidity EIA / JEDEC, JESD22-A101 1008 hours; 320V - DC: 85°C; 85% rel humidity UHAST JESD22-A118, 96 hours, 130°C, 85%RH High T emp Storage MIL-STD-750, M-1031, 1008 hours; 150°C Low-T emp Storage 1008 hours; -40°C Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E Design Considerations Careful selection of the correct component for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Dimensions – TO-92 Dimension Inches Millimeters Min Max Min Max A 0.175 0.205 4.450 5.200 B 0.170 0.210 4.320 5.330 C 0.500 12.70 D 0.135 3.430 E 0.125 0.165 3.180 4.190 F 0.080 0.105 2.040 2.660 G 0.016 0.021 0.407 0.533 H 0.045 0.055 1 .150 1 .390 I 0.095 0.105 2.420 2.660 J 0.015 0.020 0.380 0.500 A G H I F E J D F C B T MEASURING POINTC SEATING PLANE ANODE CATHODE GATE EV Series 1.5 Amp Sensitive SCRs S802ECS Packing Option Part Number Marking Weight Packing Mode Base Quantity S802ECS S802ECS 0.217G Bulk 2500 S802ECSRP S802ECS 0.217G Tape & Reel 2000 S802ECSAP S802ECS 0.217G Ammo Pack 2000

Revised: 09/04/19 Specifications are subject to change without notice. ©2019 Littelfuse, Inc Thyristors EV Series 0.8 Amp Sensitive SCRs SxX8xSx Series EV Series 1.5 Amp Sensitive SCRs TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EIA-468-C Standards 0.708 (18.0) 1.6 (41.0) 0.5 (12.7) 0.1 (2.54) 0.2 (5.08) 0.236 (6.0) 0.02 (0.5) Direction of Feed Dimensions are in inches (and millimeters). 1.97 (50.0) 14.17(360.0) Flat up 1.26 (32.0) 0.098 (2.5) MAX Gate Cathode Anode 0.354 Part Numbering System CURRENT 02: 1.5A SENSITIVITY & TYPE S: 100µA Sensitive SCR PACKAGE TYPE EC: TO-92 Center Anode PACKING TYPE SERIES S: SCR Blank: Bulk Pack RP: Reel Pack AP: Ammo Pac k S 802 VOLTAGE 8: 800V EC Sx x Part Marking System Line1 = Littelfuse Part Number Line2 = continuation…Littelfuse Part Number Y = Last Digit of Calendar Year M = Letter Month Code (A-L for Jan-Dec) L = Location Code DD = Calendar Date TO-92 SOT89 SOT223 S802ECS Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. Meets all EIA-468-C Standards TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications Flat down

25 Devices per fold

(and millimeters). 0.708 (18.0) 1.62 (41.2) 0.5 (12.7) 0.1 (2.54) 0.2 (5.08) 0.236 (6.0) 0.02 (0.5) 1.85 (47.0) 13.3 (338.0) 1.27 (32.2) 0.098 (2.5) MAX 12.2 (310.0) 1.85 (47.0) 0.354 (9.0) 0.157 DIA(4.0)