S70N08R

S70N08R SI-TECH | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 7

Technical content

Features

 VDS=70V,ID=90A Rds(on)(typ)=6m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Compliant)

Applications

 DC Motor Control  DC-DC Converters  BMS  SMPS  Automotive Environment Internal Circuit and Pin Description Package TO-220 TO-263 TO-220N TO-220P Package Code R S RN RP Package Marking Company Part No. and Package Code Assembly Information Lot No. Absolute Maximum Ratings(TC=25℃ unless otherwise noted) Symbol Parameter Value Units VDSS Drain-Source Voltage 70 V Continuous Drain Current (TC=25℃) 90 A ID Continuous Drain Current (TC=100℃) 57 A IDM Pulsed Drain Current (Note 1) 360 A VGS Gate-Source Voltage 25 V EAS Single Pulsed Avalanche Energy (Note 2) 289 mJ Maximum Power Dissipation (TC=25℃) 127 W PD Derating Factor above 25℃ 1.02 W/℃ TJ Operating Junction Temperature Range -55 to +150 ℃ TSTG Storage Temperature Range -55 to +150 ℃ D G S GD S GD S GD S G S D

SI-TECH SEMICONDUCTOR CO.,L TD N-Channel Power MOSFET Ver.2.0 2 Mar.2020 Thermal Characteristics Symbol Parameter Value Units Rth j-c Thermal Resistance, Junction to case 0.98 ℃/ W Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 70 - - V IDSS Drain-Source Leakage Current VDS=66.5V, VGS=0V - - 1 uA Gate Leakage Current, Forward VGS=25V, VDS=0V - - 100 nA IGSS Gate Leakage Current, Reverse VGS=-25V, VDS=0V - - -100 nA VGS(th) Gate Threshold Voltage VGS=VDS, ID=250uA 2.4 3 3.6 V RDS(on) Drain-Source On-State Resistance VGS=10V, ID=40A 4.8 6 7.2 m Qg Total Gate Charge - 92 - nC Qgs Gate-Source Charge - 22 - nC Qgd Gate-Drain Charge VDD=48V VGS=10V ID=50A (Note 3) - 23 - nC td(on) Turn-on Delay Time - 22 - ns tr Turn-on Rise Time - 12 - ns td(off) Turn-off Delay Time - 28 - ns tf Turn-off Fall Time VDD=37.5V,VGS=10V ID=45A,RG=4.7 TC=25℃ (Note 3) - 34 - ns Rg Gate Resistance VDS=0V,VGS=0V,f=1MHz - 0.9 -  Ciss Input Capacitance - 4713 - pF Coss Output Capacitance - 410 - pF Crss Reverse Transfer Capacitance VDS=25V VGS=0V f = 1MHz - 330 - pF Source-Drain Diode Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Diode Forward Current - - 90 A ISM Pulsed Source Diode Forward Current (Note 1) - - 360 A VSD Forward On Voltage VGS=0V, IS=45A - 0.89 1 V tr r Reverse Recovery Time - 50 - ns Qr r Reverse Recovery Charge VGS=0V, IS=45A dIF/dt = 100A/us - 90 - nC Notes： 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=0.5mH, VDD=64V, RG=25Ω, Starting TJ=25℃ 3. Pulse Width ≤ 300 us; Duty Cycle≤2%

SI-TECH SEMICONDUCTOR CO.,L TD N-Channel Power MOSFET Ver.2.0 3 Mar.2020 Ptot - Power (W) RDS(ON) - On Resistance (mΩ) Typical Characteristics Output Characteristics VDS - Drain-Source Voltage (V) Safe Operation Area VDS - Drain-Source Voltage (V) Power Dissipation Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature (°C) Thermal Transient Impedance Square Wave Pulse Duration (sec) Drain-Source On Resistance ID - Drain Current (A) ID- Drain Current (A) ID- Drain Current (A) ID- Drain Current (A) Normalized Effective Transient

SI-TECH SEMICONDUCTOR CO.,L TD N-Channel Power MOSFET Ver.2.0 4 Mar.2020 C - Capacit ance (pF) V GS- Gate-Source Volt age (V) Drain-Source On Resistance VGS - Gate-Source Voltage (V) Drain-Source On Resistance Tj - Junction Temperature (°C) Capacitance VDS - Drain-Source Voltage (V) Gate Threshold Voltage T j - Junction Temperature (°C) Source-Drain Diode Forward VSD - Source-Drain Voltage (V) Gate Charge QG - Gate Charge (nC) RDS(ON)- On- Resistance (m ) Normalized Threshold Volt age Normalized On Resista nce I S - Source Current (A)

SI-TECH SEMICONDUCTOR CO.,L TD N-Channel Power MOSFET Ver.2.0 5 Mar.2020 Gate Charge Test Circuit and Waveforms Switching Time Test Circuit & Waveforms Avalanche Test Circuit& Waveforms

SI-TECH SEMICONDUCTOR CO.,L TD N-Channel Power MOSFET Ver.2.0 6 Mar.2020 Package Outline TO220 UNIT:mm SYMBOL MIN NOM MAX A 4.47 4.57 4.67 A1 1.27 1.30 1.33 A2 2.35 2.40 2.45 b 0.76 0.80 0.89 b2 1.23 1.27 1.38 c 0.47 0.50 0.53 D 15.60 15.70 15.80 D1 9.10 9.20 9.30 E 9.70 9.90 10.10 E1 - 8.70 - e 2.54 BSC e1 5.08 BSC L 12.83 13.00 13.17 L1 3.00 3.10 3.20 P 3.57 3.60 3.63 Q 2.75 2.80 2.85 Θ1 5° 7° 9° Θ2 1° 3° 5° Θ3 1° 3° 5°

SI-TECH SEMICONDUCTOR CO.,L TD N-Channel Power MOSFET Ver.2.0 7 Mar.2020 TO263 UNIT:mm SYMBOL MIN NOM MAX A 4.47 4.57 4.67 A1 1.25 1.30 1.35 A2 2.34 2.40 2.46 b 1.22 1.27 1.32 b1 0.75 0.80 0.85 c 0.45 0.50 0.55 E 9.90 10.00 10.10 E1 9.78 9.88 9.98 E2 7.95 8.00 8.05 E3 1.10 1.20 1.30 E4 7.95 8.00 8.05 e 2.54 BSC H 15.00 15.20 15.40 H1 10.30 10.40 10.50 L 2.20 2.40 2.60 L1 1.50 1.60 1.70 Θ 5° 7° 9° Θ1 1° 3° 5° Θ2 5° 7° 9° Θ3 11° 13° 15° Θ4 0° 2° 5°