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Technical content
Features
- High Surge Capability DO-4 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Repetitive peak reverse voltage V RRM V RMS reverse voltage VRMS V DC blocking voltage VDC V S6K thru S6QR 2. Reverse polarity (R): Stud is anode. Conditions S6K (R) S6M (R) S6Q (R) 1000 700560 1000800
- Types from 800 V to 1200 V VRRM Silicon Standard Recovery Diode Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 800 1200 840 1200 DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage μA mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W VR = 100 V, Tj = 25 °C IF = 6 A, Tj = 25 °C Reverse current IR VF Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM A V TC = 25 °C, tp = 8.3 ms TC ≤ 160 °C Conditions S6M (R) 2.50 2.50 VR = 100 V, Tj = 175 °C 12 12 1.1 -55 to 150 1000800 S6Q (R) 1.1 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 S6K (R) 2.50 666 167 167 167 1200 1.1 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S6K thru S6QR DO- 4 (DO-203AA) J G F A E D P N B C M Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3