S6A13 TOSHIBA | Alldatasheet

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TOSHIBA Thyristor Silicon Planar Type S6A13 Condenser Discharge Control Applications /Gb7/G20FWD included between cathode and anode /Gb7/G20Critical rate of rise of ON-state current: di/dt = 750 A/µs /Gb7/G20Repetitive peak surge ON-state current: I TRM = 500 A (tw = 2 µs) /Gb7/G20Repetitive peak OFF-state voltage: VDRM = 800 V /Gb7/G20Gate trigger current: IGT = 30 mA max. Maximum Ratings Characteristics Symbol Rating Unit Repetitive peak OFF-state voltage V DRM 800 V Repetitive peak surge ON-state current (Note) ITRM 500 A Repetitive peak surge forward current (Note) IFRM 500 A Critical rate of rise of ON-state current (Note) di/dt 750 A/ /G6ds Peak gate power dissipation P GM 5 W Average gate power dissipation P G (AV) 0.5 /G20 W Peak forward gate voltage V FGM 10 /G20 V Peak reverse gate voltage V RGM /G2d5/G20 V Peak forward gate current I GM 2 /G20 A Junction temperature T j /G2d40~125 °C Storage temperature range T stg /G2d40~150 °C Note: VD /G3c/G20/G3d0.8 /Gb4 rated, Tc /G3d 85°C, igp /G3e/G20/G3d60 mA, tgw /G3e/G3d10 /G6ds, tgr /G3c/G3d150 ns Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 13-10J1B Weight: 1.5 g (typ.) ※1 MARK S6A13 TYPE NAME S6A13 Lot Number Month (starting from alphabet A) Year (last decimal digit of the current year)

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Repetitive peak OFF-state current I DRM V DRM /G3d Rated /Gbe /Gbe 10 /G6dA Peak ON-state voltage (thyristor) V TM I TM /G3d 25 A/G20/Gbe /Gbe 1.5 V Peak forward voltage (diode) V FM I FM /G3d 25 A /Gbe/G20 /Gbe/G202.0 V Gate trigger voltage V GT /Gbe /Gbe 1.0 V Gate trigger current I GT VD /G3d 6 V, RL /G3d 10 /G57/G20 /Gbe /Gbe 30 mA Gate non-trigger voltage V GD V D /G3d Rated, Tc /G3d 125°C/G20 0.2 /Gbe /Gbe V Critical rate of rise of OFF-state voltage dv/dt VDRM /G3d Rated, Tc /G3d 125°C Exponential Rise/G20 /Gbe 50 /Gbe V/ /G6ds Holding current I H V D /G3d 6 V, ITM /G3d 1 A/G20/Gbe /Gbe 35 mA Thermal resistance (junction to ambient) R th (j-a) DC /Gbe /Gbe 70 °C/W Equivalent Circuit 0.5 IP tw /G3d 2 /G6ds t IP

0.5 IP di/dt /G3d

t tw /G3d /G70LC , IP /G3d L/C VD Test Circuit Examples C R L VD S6A13 GATE CATHODE ANODE

Instantaneous ON-state current i T (A) iGT(tw)/IGT Case temperature Tc (°C) IGT (Tc)/IGT (Tc /G3d 25°C) – Tc (typical) IGT (Tc)/IGT (Tc /G3d 25°C) Case temperature Tc (°C) VGT (Tc)/VGT (Tc /G3d 25°C) – Tc (typical) VGT (Tc)/VGT (Tc /G3d 25°C) Case temperature Tc (°C) IH (Tc)/IH (Tc /G3d 25°C) – Tc (typical) IH (Tc)/IH (Tc /G3d 25°C) Gate trigger pulse width t w ( /G6ds) Pulse trigger characteristics (typical) Instantaneous ON-state voltage v T ( V ) iT – vT (thyristor) Instantaneous forward voltage v F (V) iF – vF (diode) Instantaneous forward current i F (A) 0.0 /G2d60 2.5 2.0 1.5 1.0 0.5 140 100 60 20 /G2d20 VD /G3d 6 V RL /G3d 10 /G57 2.0 0.0 /G2d60 140 100 60 20 /G2d20 0.5 1.0 1.5 VD /G3d 6 V RL /G3d 10 /G57 140 100 60 20 /G2d20 VD /G3d 6 V ITM /G3d 1 A 0.0 2.5 2.0 1.5 1.0 0.5 /G2d60 0.1 1 10 100 Resistance load VD /G3d 6 V RL /G3d 10 /G57/G20 Tc /G3d 25°C Rectangular waveform tw iGT 0.0 1000 100 1.0 1.5 2.5 3.0 25°C Tj /G3d 125°C 0.5 2.0 0.0 1000 100 25°CTj /G3d 125°C

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE