S6370 TOSHIBA | Alldatasheet
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TOSHIBA THYRISTOR SILICON PLANAR TYPE S6370 LOW POWER SWITCHING APPLICATIONS (STROBE TRIGGER) /G6c/G20Repetitive Peak Off-State Voltage : V DRM = 400V /G6c/G20Repetitive Peak Reverse Voltage : V RRM = 400V /G6c/G20Fast Turn On Time : t gt = 1.5µs /G6c/G20Plastic Mold Package (TO−92) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage GK=1k/G57) VDRM VRRM 400 V Non−Repetitive Peak Reverse Voltage (Non−rep<5ms, RGK=1kΩ, Tj=0~125°C) VRSM 450 V Average On−State Current (Half Sine Waveform Ta=45°C) IT (AV) 300 mA R.M.S. On−State Current I T (RMS) 450 mW 9 (50Hz) Peak One Cycle Surge On-State Current (Non-Repetitive) ITSM 9.9 (60Hz) A Peak Gate Power Dissipation P GM 0.1 W Average Gate Power Dissipation P G (AV) 0.01 W Peak Reverse Gate Voltage V RGM −5 V Peak Forward Gate Current I GM 125 mA Junction Temperature T j −40~125 °C Storage Temperature Range T stg −40~125 °C Note : Use with gate resistance by all means JEDEC TO −92 EIAJ SC −43 TOSHIBA 13−5A1A Weight : 0.2 g Unit in mm /Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibi lity of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o r damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handlin g Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this documen t shall be made at the customer’s own risk. 000707EAA2
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Repetitive Peak Off−State Current and Repetitive Peak Reverse Current IDRM IRRM VDRM = VRRM = 400V RGK = 1k/G57 ― ― 10 /G6dA Peak On−State Voltage V TM I TM = 2A ― ― 2.0 V Gate Trigger Voltage V GT ― ― 0.8 V Gate Trigger Current I GT VD = 6V, RL = 100/G57, RGK = 1kΩ ― ― 200 /G6dA Turn On Time t gt V D = 400V, iG = 5mA ― ― 1.5 /G6ds Gate Non−Trigger Voltage V GD V D = 6V, RGK = 1kΩ 0.2 ― ― V Holding Current I H R L = 100Ω, RGK = 1kΩ ― 4 ― mA Thermal Resistance R th (j−a) Junction to Ambient ― ― 250 °C / W MARKING NUMBER SYMBOL MARK *1 TYPE S6370 S6370 Example 8A : January 1998 8B : February 1998 8L : December 1998 /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assume d by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from i ts use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAA2