S60SC4MT SHINDENGEN | Alldatasheet
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Twin Diode Schottky Barrier Diode MS+i2 OUTLINE Weight 52g (Typ) 40V 60A incon : ——— mao ES ) ( @ Tj=150C © Tj=150°C cra iS XG x © Prrsm7/\\S YY xEREE © Prnsm Rating Type No. N\\] Se0SCAMT © BjcdV\\ey © Small jc wit | oARRSE © High lo Rating Polarity pte |} e214 yFYIBR © Switching Regulator S| * DC/DCIYI\\-9 * DC/DC Converter pile RIG, 7—L,. OAH © Home Appliance, Game, Office Automation ry) ©3896 ‘© Communication, Portable set Dee D 2 G SUEZ OU CIRM E Web th bE CBWE S VO MRETZ RIE OU CBRE FUEERRE SEI FSO For details of the outline dimensions, refer to our web site. As for the marking, efer to the specification "Marking, Terminal Connection”. MewR RATINGS @MXHATH Absolute Maximum Ratings (i %.4 Tc = 25'C/unless otherwise specified) a] == Lao ih Wh Item Symbol Conditions ayEONG: eon Unit Tetra 7 Sirage Torperaire | Tste | =55~150 c er 1G 5 a Speraton Junction Temperature Tj | 150 c EA UAL , Maximum Reverse Voltage 40 V BDL EARS 7 Biel wv Atiosms, duty 1/40 . Repetitive Peak Surge Reverse Vottage| Varsm | pulse width 08ms. duty 1/40 | 45 Vv Hye Jo | S0uAiF RM, HASH, LATS ON M TH MTo/2, Te= 127 60 A Average Rectified Forward Current 50Hz sine wave, Resistance load, Per diode lo/2, Te=127°C 7 EAs — 7 MUL I SOHZ IFSEVE, JERRY KLARA 7 WEA, T]= 250 | 500 A Peak Surge Forward Current FSM | 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25°C £ {Tit ba > (HES = OSN-m) a ea ee Ce orqu:05N-my | 08 Nem @B AH AA Electrical Characteristics (iO %v4 Tc =25'C/unless otherwise specified) GLE Ve | r=30A. MAME, HFM Y DBE MAX 0.55, Vv Forward Voltage F | Ir=30A, pulse measurement, Per diode TYP 049 we PAO. VAI TEM D OMIM Reverse Current | Tk | Vr=40V. pulse measurement, Per diode | MAX 3 mA deer tek a = 2 Vr=10V, LR EMD OBL Junction Capacitance f=1MHz, Vr=10V. _ perdiode TYP 790 pF ssi | pi Br — 2M | AAT fhatial Resistance [Bie Seto case |__MAX 05 c/w 86 (1533-1) www.shindengen.co.jp/product/semi!
Center Tap Common Cathode S60SC4MT Mi#tB] CHARACTERISTIC DIAGRAMS NA IRE MRNA CARY ERAN Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability er ee | =a ~ wave, St wa § al Fut ZA * Basa rene Bama | ee | | eis See Bees econ SEED baa ‘2m | SiS Tex wetrve) Sega Berries ie Va BBS ess : MATT ii Forward Voltage Vr (V) Average Rectified Forward Current Io (A) Number of Cycles (cycle) a: ee eee cee ciate Sine, Dissipation ieee Capacitance 1000; Ey 100005 oe) es 7 SHEE Ee al ACRE =6—|- Sea ae Sea les ee Be elie, «| Maen A ee ee es | ca SSG Ee : Ped |e. ae) © ca fe 6 6 ea | eee ee JZ. \\\\oo rth ae _ REREARTELLES ereee eee % _ eee LR Woz as SO Reverse Voltage Ve (V) Reverse Voltage Vr (V) Reverse Voltage Vr (V) foo” is S Soom
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| Beagles g HHH RHE Wie | Son PEEL | |) eanne amet oe (| SESE RR Wl Case Temperature Te (°C) PABLO NE ISMN [ZF YF EH THY EF. Typical SA MZRILRETWET. Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi! (893-1) 87