S60L120 SHINDENGEN | Alldatasheet

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Single Diode Super Fast Recovery Diode MS OUTLINE Weight 6.1g(Typ) ahem) 18 __, 3 1200V 60A seman g © @iEFRD © High Voltage Super FRD Typeno\\ | @ di] 8 1X © Low Noise wit S60L120 trr=200ns @ trr=200ns Polarity AK A } ~~ © Bichiy\\eLy © Small Bjc yeh e21vFYIBE © Switching Regulator i i ‘*RABLOA ‘* Home Appliance, Office Automation yy Y toe osm © Communication seovenpestan peuin comm sev . . 254m © Fly Wheel inveme is ose orc orm Va SHEN Ov TAMMIE Webtt4 b LIL H 1 A— FAY 7 RR) BIR FS, BAUR OW TILEREE RRS CHE FSU, For detals of the outine dimensions, refer to our web ste or the diode Iccnical dela book Aor to maning, fro the apoccaton “Marking, ermal Gonnecton® MwX RATINGS @iEXtRATH Absolute Maximum Ratings (ioe Te = 25) HOA me | 4h ih Hi ina Item [symbol] conditions Type No. $60L120 ting Tera a : tape temperate a eer TIL :

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HOE I SOHz isk, MGW, 74 ft, Te=40T A Average Rectified Forward Current 10 | 50Hz sine wave, Resistance load, With heatsink, Te=40°C. i ART — YE i I SOHz Ese, JERY ELIA 7 AEA TM, T] = 25C A Peak Surge Forward Current FSM_| 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25°C A OTT hae (HESS OSN-m) Maul ee [TOR | fEetincatsdomecosm LOB | Nm @BAH AAT Electrical Characteristics (H#O*VI Te =25C) MULE =e ARV AWS 7 id Votaae Te=60A, pulse urement V wii Tp = 7 28 Ailsa ED overy Tine trr | Ir=05A, Ir=1A, 0.25In MAX 200 ns Fee es cpactance Cj | £=1MHz, Ve=10V TYP 205 pF Bait i RGB 7 - AB Ww Fra Restores MAX 055 cw KRRAR IS RAKRO LDC HMMS LIERBFSOEHHY EF. All specifications are subject to change without notice. 284 (1533) wwwshindengen.co.jpiproduct/semil

Super FRD (Single) Three Terminal Type $60L120 WSt4E1 CHARACTERISTIC DIAGRAMS. WAS Tate IAB DR Aaa CARY RE Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability =m — ™ t tice a mm ine wave ot | ee ee | AD _|

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Pf. Te= 15C(TYP) Sh “ani 4. Z ScHe P=] | ay y iad PPSESE Te= BC(MAX) 5 ey Pee ee a

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Ses |e | UY é ane ‘yan | | SE eT SLL emne I Z| a | ea | ov it Forward Voltage Vr (V) Average Rectified Forward Current Io (A) Number of Cycles (cycle) FAL—-F4YIN—-TJ Te-lo BARR Derating Curve Te-lo Junction Capacitance 2° ee] | Ee oN oe Bere * ofa Se) [em se cane) RRSEHE 3 N 1 LL ®., se SL ATEN it N in PEC Pees q BSN | 23 pet SNE PN oo ‘| ans A Cn aD aaa Case Temperature Te (‘C) Reverse Voltage Vk (V) | * Sine wave (t 50Hz THE LT ET. TSO Sins wave ue for mossurements. EARL O NTE — MAIL IF EHO THD EF. . . . Typical SA ENERL TET. KRRAB IS MAKRO LDC HMMS LIEREFSOEPHU EF. +* Semiconductor products generally have characteristic variation. All specifications are subject to change without notice. ‘Typical is a statistical average of the device's ability. www.shindengen.co.jp/productisemi! (833) 285