S5D40120D SMCDIODE | Alldatasheet

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Technical content

Data Sheet N2410, REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S5D40120D S5D40120D 1200V SIC POWER SCHOTTKY RECTIFIER

Description

Applications

Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 1200 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=150°C, rectangularwaveform 20(perleg) A40(perdevice) PeakOneCycleNon-RepetitiveSurge Current(perleg) IFSM 10ms,HalfSinepulse,TJ =25C 145 A Non-repetitivePeakForwardSurge Current(perleg) IF,MAX 10us,HalfSinepulse,TJ =25°C 1575 A TO-247AD(TO-247-3)  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection S5D40120D is a single SiC Schottky rectifier packaged in TO-247AD(TO-247-3) case. The device is a high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S5D40120D is ideal for energy sensitive, high frequency applications in challenging environments.  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request

Data Sheet N2410, REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S5D40120D * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistanceJunctionto Case RJC DCoperation,Tj=25℃ 0.84(perleg) 0.42(bothleg) C/W Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(perleg)* VF1 @20A,Pulse,TJ =25C 1.5 1.8 V VF2 @20A,Pulse,TJ =175C 2.2 3.0 V ReverseCurrent(perleg)* IR1 @VR =ratedVR TJ =25C 2 25 uA IR2 @VR =ratedVR TJ =175C 10 150 uA JunctionCapacitance(perleg) CT VR=0V,Tj=25℃,f=1MHz 1620 - pF Thermal-Mechanical Specifications: Tube Specification Marking Diagram

Ordering Information

S5D40120D TO-247AD(TO-247-3) 25pcs/tube WhereXXXXX is YYWWL S5D =DeviceType D =Package type 40 =ForwardCurrent (40A) 120 =ReverseVoltage (1200V) SSG =SSG YY = Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resinUL:94V-0

Data Sheet N2410, REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S5D40120D Ratings and Characteristics Curves (per leg) Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics Fig.3-Capacitance vs. Reverse Voltage

Data Sheet N2410, REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S5D40120D Mechanical Dimensions TO-247AD

Data Sheet N2410, REV.A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S5D40120D DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.