S594T-GS08

S594T-GS08 VISHAY | Alldatasheet

Document overview

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Technical content

Features

• Integrated gate protection diodes  Low noise figure  High gain  Biasing network on chip  Improved cross modulation at gain reduction  High AGC-range  SMD package  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications

Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage. Mechanical Data Typ: S594T Case: SOT-143 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S594TR Case: SOT-143R Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S594TRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Parts Table RF in AGC S D VDD(VDS) C block RFC RF out 94 9296 C block C block Part Marking Package S594T 594 SOT -143 S594TR 94R SOT -143R S594TRW W94 SOT -343R

www.vishay.com Document Number 85048 Rev. 1.6, 08-Sep-08 S594T / S594TR / S594TRW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Caution for Gate 1 switch-off mode: No external DC-voltage on Gate 1 in active mode! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kΩ collector resistor. Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified VDS = 5 V, VG2S = 4 V, ID= IDSP , f = 1 MHz Parameter Test condition Symbol Value Unit Drain - source voltage V DS 8V Drain current I D 20 mA Gate 1/Gate 2 - source peak current ± IG1/G2SM 10 mA Gate 1/Gate 2 - source voltage ± V G1/G2SM 6V Total power dissipation T amb ≤ 60 °C P tot 160 mW Channel temperature T Ch 150 °C Storage temperature range T stg - 55 to + 150 °C Parameter Test condition Symbol Value Unit Channel ambient 1) RthChA 450 K/W Parameter Test condition Symbol Min Typ. Max Unit Gate 1 - source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 ± V (BR)G1SS 71 0 V Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V (BR)G2SS 71 0 V Gate 1 - source leakage current + V G1S = 5 V, VG2S = VDS = 0 + I G1SS 50 μA - VG1S = 5 V, VG2S = VDS = 0 - I G1SS 100 μA Gate 2 - source leakage current ±V G2S = 5 V, VG1S = VDS = 0 ± I G2SS 20 nA Drain current V DS = 5 V, VG1S = 0, VG2S = 4 V I DSS 50 500 μA Self-biased operating current V DS = 5 V, VG1S = nc, VG2S = 4 V I DSP 71 0 1 4 m A Gate 2 - source cut-off voltage V DS = 5 V, VG1S = nc, ID = 20 μAV G2S(OFF) 1.0 V Parameter Test condition Symbol Min Typ. Max Unit Forward transadmittance |y 21s| 2 02 42 8 m S Gate 1 input capacitance C issg1 2.1 2.5 pF Feedback capacitance C rss 20 fF Output capacitance C oss 0.9 pF Power gain G S = 2 mS, GL = 0.5 mS, f = 200 MHz Gps 26 dB GS = 3,3 mS, GL = 1 mS, f = 800 MHz Gps 16.5 20 dB

Rev. 1.6, 08-Sep-08 Vishay Semiconductors www.vishay.com Common Emitter S-Parameters AGC range V DS = 5 V, VG2S = 1 to 4 V, f = 800 MHz ΔGps 40 dB Noise figure G S = 2 mS, GL = 0.5 mS, f = 200 MHz F1 d B GS = 3.3 mS, GL = 1 mS, f = 800 MHz F1 . 3 d B Parameter Test condition Symbol Min Typ. Max Unit f/MHz S11 S21 S12 S22 LOG MAG ANG LOG MAG ANG LOG MAG ANG LOG MAG ANG deg deg deg deg

Figure 9. Input Reflection Coefficient Figure 10. Forward Transmission Coefficient

1300 MHz

Figure 11. Reverse Transmission Coefficient Figure 12. Output Reflection Coefficient

Rev. 1.6, 08-Sep-08 Vishay Semiconductors www.vishay.com Package Dimensions in mm Package Dimensions in mm 96 12239 96 12240 foot print recommendation: 0.8 [0.031] 1.9 [0.075] 0.8 [0.031] 1.7 [0.067] 0.15 [0.006] 0.08 [0.003] 1.1 [0.043] 0.1 [0.004] max. 1.4 [0.055] 1.2 [0.047] 0.9 [0.035] 1.8 [0.071] 2 [0.079] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] 1.6 [0.063] 2.8 [0.110] 3 [0.118] 2.35 [0.093] 0.5 [0.020] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 1.8 [0.071] 2 [0.079]

www.vishay.com Document Number 85048 Rev. 1.6, 08-Sep-08 S594T / S594TR / S594TRW Vishay Semiconductors Package Dimensions in mm 96 12238

Rev. 1.6, 08-Sep-08 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Cl ean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.