S592T VISHAY | Alldatasheet

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/C0068Integrated gate protection diodes /C0068Low noise figure /C006820mS forward transadmittance /C0068Biasing network on chip /C0068Improved cross modulation at gain reduction /C0068High AGC-range /C0068SMD package 13 579 94 9279 S592T Marking: 592 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 95 10831 94 9278 S592TR Marking: 29R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 13 56613 654 S592TRW Marking: W5L Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-992 (6) Document Number 85046 Absolute Maximum Ratings Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Drain - source voltage VDS 8 V Drain current ID 20 mA Gate 1/Gate 2 - source peak current ±IG1/G2SM 10 mA Gate 1/Gate 2 - source Voltage ±VG1/G2SM 6 V Total power dissipation Tamb ≤ 78 /C0176C Ptot 160 mW Channel temperature TCh 150 /C0176C Storage temperature range Tstg –55 to +150 /C0176C Maximum Thermal Resistance Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35/C0109m Cu R thChA 450 K/W Electrical DC Characteristics Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Gate 1 - source breakdown voltage ±IG1S = 10 mA, VG2S = VDS = 0 ±V(BR)G1SS 7 10 V Gate 2 - source breakdown voltage ±IG2S = 10 mA, VG1S = VDS = 0 ±V(BR)G2SS 7 10 V Gate 1 - source +VG1S = 5 V, VG2S = VDS = 0 +IG1SS 50 /C0109A leakage current –VG1S = 5 V, VG2S = VDS = 0 –IG1SS 100 /C0109A Gate 2 - source leakage current ±VG2S = 5 V, VG1S = VDS = 0 ±IG2SS 20 nA Drain current VDS = 5 V, VG1S = 0, VG2S = 4 V IDSS 50 500 /C0109A Self-biased operating current VDS = 5 V, VG1S = nc, VG2S = 4 V IDSP 7 10 14 mA Gate 2 - source cut-off voltage VDS = 5 V, VG1S = nc, ID = 20 /C0109A VG2S(OFF) 1.0 V Caution for Gate 1 switch-off mode: No external DC-voltage on Gate 1 in active mode! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 k/C0087 collector resistor.

www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 3 (6) Document Number 85046 Electrical AC Characteristics VDS = 5 V, VG2S = 4 V, f = 1 MHz , Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Forward transadmittance y21s 17 20 23 mS Gate 1 input capacitance C issg1 2.0 2.5 pF Feedback capacitance C rss 20 fF Output capacitance C oss 0.9 pF Power gain G S = 2 mS, GL = 0.5 mS, f = 200 MHz G ps 26 dBg G S = 3,3 mS, GL = 1 mS, f = 800 MHz G ps 16.5 20 dB AGC range VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz /C0068G ps 40 dB Noise figure G S = 2 mS, GL = 0.5 mS, f = 200 MHz F 1 dBg G S = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.6 2.5 dB

www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-994 (6) Document Number 85046 Dimensions of S592T in mm 96 12240 Dimensions of S592TR in mm 96 12239

www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 5 (6) Document Number 85046 Dimensions of S592TRW in mm 96 12238

www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-996 (6) Document Number 85046 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423