S5820 DSK | Alldatasheet
Document overview
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Technical content
3.1± 0.25 6.9± 0.25 5. 9 ± 0. 25 2. 3 ± 0. 15 1. 3± 0. 25 0.203MAX 7.8± 0. 2 0.25± 0.06
FEATURES
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability MECHANICAL DATA Case:JEDEC SMC,molded plastic Terminals: Solderable per MIL- STD-202,method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.21 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS M axim um recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Max imum DC bloc king v oltage V DC V Maximum average forw ard rectified current L =90 P eak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 3.0A (Note 1) @ 9.4A Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG S5820 - - - S5822 A For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications I F(AV) VOLTAGE RANGE: 20 --- 40 V CURRENT: 3.0 A SMC(DO-214AB) The plastic material carries U/L recognition 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS S5820 3.Thermal resistance junction to ambient mA I R I FSM NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. A - 55 ---- + 125 - 55 ---- + 150 80.0 250 3.0 20.0 2.0 0.525 0.95 0.50 V F V 0.90 0.475 0.85 S5821 S5822 3020 SCHOTTKY BARRIER RECTIFIERS SURFACE MOUNT Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
CAPACITANCE, pF REVERSE VOLTAGE,VOLTS INSTANTANEOUS FORWARD CURRENT FIG.3 -- TYPICAL INSTANTANEOUS FORWARD XXXXXXXXX---- CHARACTERISTICS PEAK FORWARD SURGE CURRENT FIG.4 -- TYPICAL JUNCTION CAPACITANCE S5820 - - - S5822 LEAD TEMPERATURE, NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.1 -- FORWARD DERATING CURVE FIG.2 -- PEAK FORWARD SURGE CURRENT AVERAGE FORWARD RECTIFIED CURRENT T J =25 ℃ f=1.0MHz Vsig=50mVp-p 0.1 1 10010 100 1000 1 10 100 T J J MAX 8.3ms Single Half Sine-Wave 25 50 75 100 125 150 175 Resistive or Inductive Load 0.375"(9.5mm)Lead Length T J =25 Pul se wi dth=300 s 1% D uty C ycle S 5 8 20 S 5 8 21 S 5 8 22 www.diode.kr Diode Semiconductor Korea