S5817J DSK | Alldatasheet
Document overview
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Technical content
1.70± 0.25 4.3± 0.1 2.6± 0.15 2.35± 0.1 1.3± 0.2 0.203MAX 0.2± 0.05 5.6± 0.2
FEATURES
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability MECHANICAL DATA Case:JEDEC SMAJ,molded plastic Terminals: Solderable per MIL- STD-202,method 208 Polarity: Color band deno tes cathode Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single pha se,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS M axim um recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current L =90 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG S5817J- - -S5819J A For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications I F(AV) SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A SMAJ The plastic material carries U/L recognition 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS S5817J 3.Thermal resistance junction to ambient mA I R I FSM NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. A - 55 ---- + 125 - 55 ---- + 150 110 1.0 1.0 Maximum instantaneous forw ard voltage @ 1.0A z (Note 1) @ 3.0A V F V S5818J S5819J 0.90 0.600.45 0.75 0.55 0.875 S17 S18 S19Device marking code Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
CAPACITANCE, pF AMPERES INSTANTANEOUS FORWARD CURRENT S5817J- - - S5819J LEAD TEMPERATURE, NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.1 -- FORWARD DERATING CURVE FIG.2 -- PEAK FORWARD SURGE CURRENT AVERAGE FORWARD RECTIFIED CURRENT FIG.3 -- TYPICAL INSTANTANEOUS FORWARD X - CHARACTERISTICS PEAK FORWARD SURGE CURRENT REVERSE VOLTAGE,VOLTS FIG.4 -- TYPICAL JUNCTION CAPACITANCE T J =25℃ f=1.0MHz Vsig=50mVp-p 100 400 0.1 1 10 100 11 0 1 00 T J J MAX 8.3ms Single Half Sine-Wave 0.5 1.0 0 25 50 75 100 125 150 0.75 0.25 Resistive or Inductive Load 0.375"(9.5mm)Lead Length S5817J S5819J S5818J T J =25 Pulse width=300 s 1% Duty Cycle www.diode.kr Diode Semiconductor Korea