S5277B TAYCHIPST | Alldatasheet
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Technical content
100V-1000V 1.0A S5277B THRU S5277N 1 of 2 Mechanical Data Web Site: www.taychipst.com
FEATURES
E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SILICON RECTIFIER DIODES * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram Rating at 25°C ambient temperature unless otherwise specified. SYMBOL S5277B S5277G S5277J S5277N UNIT Maximum Repetitive Peak Reverse Voltage V RRM 100 400 600 1000 V Maximum Average Forward Current I F(AV) 1.0 A Maximum Peak One Cycle Surge Forward Current (50Hz) (60Hz) (50Hz) (60Hz) (Non-Repetitive) I FSM 50 55 30 33 A Peak Forward Voltage at I F = 1.0 A V F 1.2 V Repetitive Peak Reverse Current I RRM 10 µA Thermal Resistance (Junction to Ambient) R th (j-a) 120 °C/W Junction Temperature Range T J - 40 to + 150 °C Storage Temperature Range T STG - 40 to + 150 °C RATING
2 of 2E-mail: sales@taychipst.com Web Site: www.taychipst.com Instantaneous forward voltage V F ( V ) i F – v F Instantaneous forward current i F ( A ) Time t (s) r th (j-a) – t Transient thermal impedance r th (j-a) (°C/W) Average forward current I F (AV) ( A ) Ta max – I F (AV) Maximum allowable ambient temperature Ta max (°C) Peak surge forward current I FSM (A) Number of cycles at 50 Hz and 60 Hz Surge forward current (non-repetitive) 0.1 0.8 0.3 0.5 Tj /G3d 25°C 150°C 200 160 120 Resistive and inductive load Ca p acitive load Tj /G3d 25°C 3 5 10 30 50 100 60 Hz 50 Hz 60 Hz 50 Hz S5277B-G S5277J-N 0.1 0.01 100 1000 10000 0.1 1 10 100 10000.001 100V-1000V 1.0A S5277B THRU S5277N SILICON RECTIFIER DIODES