S50VB60 SHINDENGEN | Alldatasheet
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Technical content
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Bridge Diode OUTLINE DIMENSIONS RATINGS Square In-line Package SHINDENGEN Unit : mm Case : S50VBS50VB60
- Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40 ～150 ℃ Operating Junction Temperature Tj 150 ℃ Maximum Reverse Voltage VRM 600 V Average Rectified Forward Current IO 50Hz sine wave, R-load, With heatsink, Tc=95℃ 50 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ 500 A Current Squared Time I2t 1ms≦t＜10ms Ｔc=25℃ 800 A 2ｓ Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR （Recommended torque : 0.6N･m） 0.8 N ･m
- Electrical Characteristics (Tc=25℃) Item Symbol Conditions Ratings Unit Forward Voltage VF IF=25A, Pulse measurement, Rating of per diode Max.1.05 V Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Max.10 μA Thermal Resistance θjc junction to case Max.0.5 ℃/W
0.1 100 S50VBx Tc=150°C [TYP] Tc=25°C [TYP] Pulse measurement per diode Forward Voltage V F [V] Forward Current I F [A]
S50VBx Forward Power Dissipation Tj = Tjmax SIN Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
T D=tp/T 0 20 40 60 80 100 120 140 160 S50VBx Derating Curve VR = VRM SIN VR Case Temperature Tc [ °C] Average Rectified Forward Current I O [A]
Peak Surge Forward Capability 100 200 300 400 500 600 700 1 10 100 S50VBx 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=25°C before surge current is applied