S4GVB20-C SECOS | Alldatasheet
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Technical content
S4GVB20-C ~ S4GVB80-C Voltage 200V ~ 800V
4.0 Amp Glass Passivited Bridge Rectifiers Elektronische Bauelemente
06-Feb-2013 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product
FEATURES
/circle6 Ideal for printed circuit board /circle6 Low forward voltage drop, high current capability /circle6 Reliable low cost construction utilizing molded plastic technique results in inexpensive product /circle6 These are Halogen & Pb Free components MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25 °C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Parameter Symbol Part Number Unit S4GVB20-C S4GVB40-C S4GVB60-C S4GVB80-C Maximum Recurrent Peak Reverse Voltage V RRM 200 400 600 800 V Average Rectified Output Current @50H Z sine wave, R-load Tc=110 °C, (with heatsink) IO A TA=25° C (without heatsink) 2.3 Peak Forward Surge Current @ 50H Z sine wave, 1 cycle, T A=25° C IFSM 120 A Maximum Peak Forward Voltage 2 V FM 1.05 V Peak Reverse Current 1 I RRM 5 µA I2t Rating for Fusing @1ms ≤t＜10ms, TJ=25° C I 2t 72 A 2s Typical Thermal Resistance R θJA 62 °C/W Typical Thermal Resistance R θJL 16 °C/W Operating and Storage temperature range T J,TSTG 150, -40~150 °C Notes ： 1. V RM =V RRM , Pulse measurement, Rating of per diode. 2. I FM =2A, Pulse measurement, Rating of per diode GVB REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 15.3 15.9 F 0.70 0.80 B 7.00 7.4 0 G 3.90 4.10 C 9.00 9.60 H 0.40 0.60 D 10.0 - I 0.70 1.10 E 1.20 1.40 J 3.20 3.6 0
S4GVB20-C ~ S4GVB80-C Voltage 200V ~ 800V 06-Feb-2013 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES