S4D40120A SMCDIODE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 8

Technical content

Data Sheet N2647, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D40120A S4D40120F S4D40120A/S4D40120F 1200V SIC POWER SCHOTTKY RECTIFIERS Description Features

Applications

(TO-220-2) ITO-220AC (TO-220MF-2L)  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection This 1200V 40A diode is a high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S4D40120A/S4D40120F is ideal for energy sensitive, high frequency applications in challenging environments.  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request

Data Sheet N2647, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D40120A S4D40120F * Pulsewidth<300µs, dutycycle<2% Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 1200 V AverageRectifiedForwardCurrent IF(AV)1 TC=25°C 128 A IF(AV)2 TC=155°C 41 A PeakOneCycleNon-RepetitiveSurge Current IFSM1 10ms,HalfSinepulse, TC =25°C 340 A IFSM2 10ms,HalfSinepulse, TC =110°C 245 A RepetitivePeakForwardSurgeCurrent IFRM1 10ms,HalfSinepulse,TC =25°C 161 A IFRM2 10ms,HalfSinepulse,TC =110°C 91 A PowerDissipation Ptot1 TC=25℃ 517 W Ptot2 TC=110℃ 224 W Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @40A,Pulse,TJ =25C 1.5 1.8 V VF2 @40A,Pulse,TJ =175C 2.2 3.0 V ReverseCurrent* IR1 @VR =ratedVR,TJ =25C 2 30 uA IR2 @VR =ratedVR,TJ =175C 10 300 uA JunctionCapacitance CT VR=0V,f=1MHz,Tj=25℃, 3227 - pF ReverseRecoveryCharge Qc VR=800V,TJ =25°C 167 - nC CapacitanceStoredEnergy EC VR =800V,TJ =25°C 36 - μJ

Data Sheet N2647, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D40120A S4D40120F Thermal-Mechanical Specifications: Characteristics Symbol S4D40120A S4D40120F Units JunctionTemperature TJ -55to+175 C StorageTemperature Tstg -55to+175 C TypicalThermalResistanceJunctiontoCase RJC 0.3 2 C/W

Ordering Information

S4D40120A TO-220AC(TO-220-2) 50pcs/tube S4D40120F ITO-220AC(TO-220MF-2L) 50pcs/tube

Data Sheet N2647, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D40120A S4D40120F Ratings and Characteristics Curves Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics Fig.3-Capacitance vs. Reverse Voltage Fig.4-Current Derating

Data Sheet N2647, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D40120A S4D40120F Fig.5-Power Derating Fig.6-Total Capacitance Charge vs. Reverse Voltage Fig.7-Capacitance Stored Energy

Data Sheet N2647, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D40120A S4D40120F Marking Diagram Tube Specification(TO-220-2) WhereXXXXX isYYWWL S4D =Device Type A/F =Packagetype 40 =ForwardCurrent (40A) 120 = ReverseVoltage(1200V) SSG =SSG YY =Year WW =Week L = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 (TO-220-2/TO-220-F2)

Data Sheet N2647, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D40120A S4D40120F Mechanical Dimensions TO-220AC(TO-220-2) Symbol Dimensionsinmillimeters Min. Typical Max. A 3.56 - 4.83 A1 0.51 - 1.40 A2 2.03 - 2.92 b 0.38 - 1.02 b1 1.14 - 1.78 c 0.31 - 0.61 D 14.22 - 16.51 D1 8.38 - 9.42 E1 9.65 10.16 10.67 e1 - 5.08 - H1 5.84 - 6.86 L 12.70 - 14.73 L1 - - 6.35 ΦP - 3.56 - Q 2.54 - 3.43 Mechanical Dimensions ITO-220AC(TO-220MF-2L) Symbol Dimensions in millimeters Min. Typical Max. A 4.50 4.70 4.90 A1 2.34 2.54 2.74 A2 0.70 A3 2.56 2.76 2.96 b 0.70 0.80 0.95 b1 1.28 c 0.45 0.50 0.65 D 15.67 15.87 16.07 D1 7.70 D2 9.12 E 9.96 10.16 10.36 E1 8.00 e1 5.08 F 2.1 G 7 H1 0.81 L 12.48 12.98 13.20 L1 2.93 Q 3.10 3.30 3.50 e1 5° 02 45° 03 5° e4 5°

Data Sheet N2647, REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D40120A S4D40120F DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.