S4D30120D SMCDIODE | Alldatasheet

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Data Sheet N2388, REV.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D30120D S4D30120D 1200V SIC POWER SCHOTTKY RECTIFIER

Description

Applications

Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 1200 V AverageRectifiedForwardCurrent IF(AV)1 Tc=25°C 46(perleg) A 92(perdevice) A IF(AV)2 Tc=148°C 15(perleg) A30(perdevice) PeakOneCycleNon-RepetitiveSurge Current(perleg) IFSM 10ms,HalfSinepulse,Tc=25C 130 A RepetitivePeakForwardSurgeCurrent (perleg) IFRM 10ms,HalfSinepulse,Tc=25C 68 A Power Dissipation(perleg) Ptot1 Tc=25℃ 178.6 W Ptot1 Tc=110℃ 77.4 W TO-247AD(TO-247-3)  Alternative energy inverters  Power Factor Correction (PFC)  Free-Wheeling diodes  Switching supply output rectification  Reverse polarity protection S4D30120D is a single SiC Schottky rectifier packaged in TO-247AD(TO-247-3) case. The device is a high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S4D30120D is ideal for energy sensitive, high frequency applications in challenging environments.  175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request

Data Sheet N2388, REV.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D30120D * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistanceJunctionto Case RJC DCoperation,Tj=25℃ 0.84(perleg) 0.42(bothleg) C/W Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(perleg)* VF1 @15A,Pulse,TJ =25C 1.5 1.8 V VF2 @15A,Pulse,TJ =175C 2.2 3.0 V ReverseCurrent(perleg)* IR1 @VR =ratedVR TJ =25C 3 40 uA IR2 @VR =ratedVR TJ =175C 10 50 uA JunctionCapacitance(perleg) CT VR=0V,Tj=25℃,f=1MHz 990 - pF ReverseRecoveryCharge(perleg) Qc IF =15A,di/dt=200A/μs VR=800V,TJ =25°C 76.32 - nC CapacitanceStoredEnergy(perleg) EC VR =800V,TJ =25°C 39.24 - μJ Thermal-Mechanical Specifications: Tube Specification Marking Diagram WhereXXXXX is YYWWL S4D =DeviceType D =Package type 30 =ForwardCurrent (30A) 120 =ReverseVoltage (1200V) SSG =SSG YY = Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resinUL:94V-0

Data Sheet N2388, REV.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D30120D

Ordering Information

S4D30120D TO-247AD(TO-247-3) 25pcs/tube Ratings and Characteristics Curves (per leg) Fig.2-Typical Reverse CharacteristicsFig.1-Typical Forward Voltage Characteristics

Data Sheet N2388, REV.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D30120D Fig.3-Capacitance vs. Reverse Voltage Fig.4-Current Derating Fig.5-Power Derating Fig.6-Total Capacitance Charge vs. Reverse Voltage

Data Sheet N2388, REV.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D30120D Mechanical Dimensions TO-247AD Fig.7-Capacitance Stored Energy

Data Sheet N2388, REV.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D30120D DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.

Data Sheet N2388, REV.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com S4D30120D